ZHCSC71E March   2014  – June 2021 TPS25200

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Enable
      2. 8.3.2 Thermal Sense
      3. 8.3.3 Overcurrent Protection
      4. 8.3.4 FAULT Response
      5. 8.3.5 Output Discharge
    4. 8.4 Device Functional Modes
      1. 8.4.1 Undervoltage Lockout (UVLO)
      2. 8.4.2 Overcurrent Protection (OCP)
      3. 8.4.3 Overvoltage Clamp (OVC)
      4. 8.4.4 Overvoltage Lockout (OVLO)
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Step by Step Design Produce
        2. 9.2.2.2 Input and Output Capacitance
        3. 9.2.2.3 Programming the Current-Limit Threshold
        4. 9.2.2.4 Design Above a Minimum Current Limit
        5. 9.2.2.5 Design Below a Maximum Current Limit
        6. 9.2.2.6 Power Dissipation and Junction Temperature
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

Conditions are –40°C ≤ TJ ≤ +125°C and 2.5 V ≤ VIN ≤ 6.5 V. VEN = VIN, RILIM = 33 kΩ. Positive current into terminals. Typical value is at 25°C. All voltages are with respect to GND (unless otherwise noted).
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
POWER SWITCH
rDS(on)IN–OUT resistance(1)2.5 V ≤ VIN ≤ 5 V,
IOUT = 2.5 A
TJ = 25°C6070
–40°C ≤ TJ ≤ +85°C6090
–40°C ≤ TJ ≤ +125°C6099
ENABLE INPUT EN
EN terminal turnon thresholdInput rising1.9V
EN terminal turnoff thresholdInput falling0.6V
Hyesteresis330(2)mV
IENLeakage currentVEN = 0 V or 5.5 V–22µA
DISCHARGE
RDCHGOUT discharge resistanceVOUT = 5 V, VEN = 0 V480625Ω
CURRENT LIMIT
IOSCurrent - limit, See Figure 7-4RILIM = 33 kΩ277329523127mA
RILIM = 40.2 kΩ227024232570
RILIM = 56 kΩ162017401860
RILIM = 80.6 kΩ111012061300
RILIM = 150 kΩ590647710
RILIM = 1100 kΩ4083130
OVERVOLTAGE LOCKOUT, IN
V(OVLO)IN rising OVLO threshold voltageIN rising6.87.68.45V
Hysteresis70(2)mV
VOLTAGE CLAMP, OUT
V(OVC)OUT clamp voltage thresholdCL = 1 µF, RL = 100 Ω, VIN = 6.5 V5.255.45.55V
SUPPLY CURRENT
IIN(off)Supply current, low-level outputVEN = 0 V, VIN = 5 V0.85µA
VEN = 0 or 5 V, VIN = 20 V10001700
IIN(on)Supply current, high-level outputVIN = 5 V,
No load on OUT
RILIM = 33 kΩ143200µA
RILIM = 150 kΩ134190
IREVReverse leakage currentVOUT = 6.5V, VIN = VEN = 0 V, TJ = 25°C, measure IOUT35µA
UNDERVOLTAGE LOCKOUT, IN
VUVLOIN rising UVLO threshold voltageIN rising2.352.45V
Hysteresis30(2)mV
FAULT FLAG
VOLOutput low voltage, FAULTIFAULT = 1 mA50180mV
Off-state leakageVFAULT = 6.5 V1µA
THERMAL SHUTDOWN
Thermal shutdown threshold, OTSD2155°C
Thermal shutdown threshold only in current-limit, OTSD1135
Hysteresis20(2)
Pulse-testing techniques maintain junction temperature close to ambient temperature. Thermal effects must be taken into account separately.
These parameters are provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty.