ZHCSKT9C January   2020  – March 2021 THP210

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Characterization Configuration
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Super-Beta Input Bipolar Transistors
      2. 8.3.2 Power Down
      3. 8.3.3 Flexible Gain Setting
      4. 8.3.4 Amplifier Overload Power Limit
      5. 8.3.5 Unity Gain Stability
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 I/O Headroom Considerations
      2. 9.1.2 DC Precision Analysis
        1. 9.1.2.1 DC Error Voltage at Room Temperature
        2. 9.1.2.2 DC Error Voltage Over Temperature
      3. 9.1.3 Noise Analysis
      4. 9.1.4 Mismatch of External Feedback Network
      5. 9.1.5 Operating the Power-Down Feature
      6. 9.1.6 Driving Capacitive Loads
      7. 9.1.7 Driving Differential ADCs
        1. 9.1.7.1 RC Filter Selection (Charge Kickback Filter)
        2. 9.1.7.2 Settling Time Driving the ADC Sample-and-Hold Operating Behavior
        3. 9.1.7.3 THD Performance
    2. 9.2 Typical Applications
      1. 9.2.1 MFB Filter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 ADS891x With Single-Ended RC Filter Stage
        1. 9.2.2.1 Design Requirements
          1. 9.2.2.1.1 Measurement Results
      3. 9.2.3 Attenuation Configuration Drives the ADS8912B
        1. 9.2.3.1 Design Requirements
          1. 9.2.3.1.1 Measurement Results
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Board Layout Recommendations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Super-Beta Input Bipolar Transistors

The THP210 is designed on a modern bipolar process that features TI's super-beta input transistors. Traditional bipolar transistors feature excellent voltage noise and offset drift, but suffer a tradeoff in high input bias current (IB) and high input bias current noise. Super-beta transistors offer the benefits of low voltage noise and low offset drift with an order of magnitude reduction in input bias current and reduction in input bias current noise. For many filter circuits, input bias current noise can dominate in circuits where higher resistance input resistors are used. The THP210 enables a fully-differential, low-noise amplifier design without restrictions of low input resistance at a power level unmatched by traditional single-ended amplifiers.