ZHCSKT9C January   2020  – March 2021 THP210

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Characterization Configuration
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Super-Beta Input Bipolar Transistors
      2. 8.3.2 Power Down
      3. 8.3.3 Flexible Gain Setting
      4. 8.3.4 Amplifier Overload Power Limit
      5. 8.3.5 Unity Gain Stability
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 I/O Headroom Considerations
      2. 9.1.2 DC Precision Analysis
        1. 9.1.2.1 DC Error Voltage at Room Temperature
        2. 9.1.2.2 DC Error Voltage Over Temperature
      3. 9.1.3 Noise Analysis
      4. 9.1.4 Mismatch of External Feedback Network
      5. 9.1.5 Operating the Power-Down Feature
      6. 9.1.6 Driving Capacitive Loads
      7. 9.1.7 Driving Differential ADCs
        1. 9.1.7.1 RC Filter Selection (Charge Kickback Filter)
        2. 9.1.7.2 Settling Time Driving the ADC Sample-and-Hold Operating Behavior
        3. 9.1.7.3 THD Performance
    2. 9.2 Typical Applications
      1. 9.2.1 MFB Filter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 ADS891x With Single-Ended RC Filter Stage
        1. 9.2.2.1 Design Requirements
          1. 9.2.2.1.1 Measurement Results
      3. 9.2.3 Attenuation Configuration Drives the ADS8912B
        1. 9.2.3.1 Design Requirements
          1. 9.2.3.1.1 Measurement Results
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Board Layout Recommendations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

4 Revision History

Changes from Revision B (October 2020) to Revision C (March 2021)

  • Changed PD pin description to clarify use of pin Go
  • Changed Figure 6-1, Input Offset Voltage Histogram Go
  • Changed Figure 6-2, Input Offset Voltage Histogram Go
  • Changed Figure 6-19, Output Impedance vs Frequency Go
  • Changed Y-axis unit from nV/√HZ to V/√HZ for Figure 9-5, Calculated Noise Densities vs Gain Settings Go
  • Changed Y-axis unit from nV/√HZ to V/√HZ for Figure 9-6, Calculated Noise Densities vs Gain Settings Go

Changes from Revision A (May 2020) to Revision B (October 2020)

  • 更新了整个文档中的表格、图和交叉参考的编号格式。Go
  • 添加了 D (SOIC-8) 封装和相关内容Go
  • Changed Figure 7-1, Differential Source to a Differential Gain of a 1-V/V Test Circuit, for clarityGo
  • Changed layout example circuit drawing for clarityGo

Changes from Revision * (February 2020) to Revision A (May 2020)

  • 将器件状态从预告信息（预发布）更改为量产数据（正在供货）Go