ZHCSKT9C January   2020  – March 2021 THP210

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Characterization Configuration
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Super-Beta Input Bipolar Transistors
      2. 8.3.2 Power Down
      3. 8.3.3 Flexible Gain Setting
      4. 8.3.4 Amplifier Overload Power Limit
      5. 8.3.5 Unity Gain Stability
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 I/O Headroom Considerations
      2. 9.1.2 DC Precision Analysis
        1. 9.1.2.1 DC Error Voltage at Room Temperature
        2. 9.1.2.2 DC Error Voltage Over Temperature
      3. 9.1.3 Noise Analysis
      4. 9.1.4 Mismatch of External Feedback Network
      5. 9.1.5 Operating the Power-Down Feature
      6. 9.1.6 Driving Capacitive Loads
      7. 9.1.7 Driving Differential ADCs
        1. 9.1.7.1 RC Filter Selection (Charge Kickback Filter)
        2. 9.1.7.2 Settling Time Driving the ADC Sample-and-Hold Operating Behavior
        3. 9.1.7.3 THD Performance
    2. 9.2 Typical Applications
      1. 9.2.1 MFB Filter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 ADS891x With Single-Ended RC Filter Stage
        1. 9.2.2.1 Design Requirements
          1. 9.2.2.1.1 Measurement Results
      3. 9.2.3 Attenuation Configuration Drives the ADS8912B
        1. 9.2.3.1 Design Requirements
          1. 9.2.3.1.1 Measurement Results
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Board Layout Recommendations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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DC Error Voltage Over Temperature

The THP210 offers excellent dc accuracy at room temperature. In many applications, calibration techniques are used to minimize the initial dc error; however, performing calibration over temperature is time-consuming and expensive.

The advanced drift specification of the THP210 helps to further mitigate the system error over temperature. Figure 9-3 depicts the total error voltage at these given conditions:

  • Circuit configuration as shown in Figure 9-2
  • Temperature range from –40°C to +125°C
  • Resistor tolerance of 1%

GUID-10D1EE64-A6E8-44DA-9E77-42E9AFEB02DB-low.gif Figure 9-3 Calculation of Error Voltage Over Temperature at Different Gain Settings (Variable R2)

The main contributors that are considered in this analysis are offset voltage drift, offset current drift, and bias current drift. As a result of the ultra-low bias current drift of 15 pA/°C, the impact of higher gain resistors and resistor tolerances marginally affects the error voltage with the THP210.

A use case at a gain of 5 V/V shows that the total dc error over temperature of the THP210 is at 66 µV, which is at least a factor of 10 smaller compared to existing, state-of-the-art FDAs.