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UCC21711-Q1

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适用于 IGBT/SiC 且具有过流保护的汽车级 5.7kVrms、+-10A 单通道隔离式栅极驱动器

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UCC21711-Q1

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产品详情

Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Over Current Protection, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety-Capable
Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Over Current Protection, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety-Capable
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • 4A internal active miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • UL 1577 component recognition program (planned)
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • 4A internal active miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • UL 1577 component recognition program (planned)

The UCC21711-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21711-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21711-Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21711-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21711-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21711-Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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* 数据表 UCC21711-Q1 10A Automotive Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI 数据表 PDF | HTML 2025年 12月 12日

设计和开发

如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。

评估板

UCC21710QDWEVM-054 — UCC21710 Wolfspeed® 1200V SiC 平台评估模块

UCC21710QDWEVM-054 是一款紧凑型半桥栅极驱动器评估模块，包含两个单通道隔离式栅极驱动器。此评估模块提供用于驱动多个不同型号的 Wolfspeed® 碳化硅 (SiC) MOSFET 模块、分立式 SiC MOSFET 和其他具有类似引脚排列的绝缘栅双极晶体管 (IGBT) 或 SiC MOSFET 模块所需的电源电压、驱动、保护和监控。

用户指南: PDF | HTML
英语版: PDF | HTML
TI.com 上无现货
仿真模型

UCC21710 PSpice Transient Model

SLUM679.ZIP (89 KB) - PSpice Model
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仿真模型

UCC21710 Unencrypted PSpice Transient Model

SLUM716.ZIP (6 KB) - PSpice Model
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仿真模型

UCC21732QDWRQ1 PSPICE Model

SLUM723.ZIP (6 KB) - PSpice Model
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计算工具

SLUC695 — UCC217xx XL Calculator Tool

Calculator enable customer design in terms of switching frequency and OC/DESAT, STO timing
支持的产品和硬件

支持的产品和硬件

产品
隔离式栅极驱动器
UCC21710-Q1 — 适用于 IGBT/SiC 且具有过流保护的汽车级 5.7kVrms 10A 单通道隔离式栅极驱动器 UCC21732-Q1 — 适用于 IGBT/SiC FET 且具有 2 级关断功能的汽车级 5.7kVrms ±10A 单通道隔离式栅极驱动器 UCC21736-Q1 — 适用于 IGBT/SiC 且具有主动短路的汽车级 5.7kVrms ±10A 单通道隔离式栅极驱动器 UCC21739-Q1 — 适用于 IGBT/SiC MOSFET 且具有隔离式模拟检测的汽车类 3kVrms ±10A 单通道隔离式栅极驱动器 UCC21750 — 适用于 IGBT/SiC FET 且具有 DESAT 和内部米勒钳位的 5.7kVrms ±10A 单通道隔离式栅极驱动器 UCC21750-Q1 — 适用于 IGBT/SiC 且具有 DESAT 和内部钳位的汽车级 5.7kVrms、±10A 单通道隔离式栅极驱动器 UCC21751-Q1 — 适用于 IGBT/SiC 且具有 DESAT 和内部钳位的汽车级 5.7kVrms、+-10A 单通道隔离式栅极驱动器 UCC21759-Q1 — 适用于 IGBT/SiC 且具有 DESAT 和内部钳位的汽车级 3.0kVrms、±10A 单通道隔离式栅极驱动器 UCC21711-Q1 — 适用于 IGBT/SiC 且具有过流保护的汽车级 5.7kVrms、+-10A 单通道隔离式栅极驱动器
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设计工具

UCC217X1-Q1-DESIGN-FS — Functional Safety Documents for UCC21711-Q1 and UCC21751-Q1

Functional Safety Documents for UCC21711-Q1 and UCC21751-Q1
支持的产品和硬件

支持的产品和硬件

产品
隔离式栅极驱动器
UCC21711-Q1 — 适用于 IGBT/SiC 且具有过流保护的汽车级 5.7kVrms、+-10A 单通道隔离式栅极驱动器 UCC21751-Q1 — 适用于 IGBT/SiC 且具有 DESAT 和内部钳位的汽车级 5.7kVrms、+-10A 单通道隔离式栅极驱动器
发送申请
原理图

UCC21710QDWEVM-054 Schematic Files

SLURB29.ZIP (323 KB)
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模拟工具

PSPICE-FOR-TI — PSpice® for TI 设计和仿真工具

PSpice® for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence® 的模拟分析引擎。PSpice for TI 可免费使用，包括业内超大的模型库之一，涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

借助 PSpice for TI 的设计和仿真环境及其内置的模型库，您可对复杂的混合信号设计进行仿真。创建完整的终端设备设计和原型解决方案，然后再进行布局和制造，可缩短产品上市时间并降低开发成本。 

在 PSpice for TI 设计和仿真工具中，您可以搜索 TI (...)
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参考设计

PMP23223 — 具有辅助电源的智能隔离式栅极驱动器参考设计

此参考设计展示了 UCC21732 栅极驱动器与 UCC14xxx 系列辅助电源的组合。此设计可用于驱动各种功率管，包括直接连接到 Wolfspeed 碳化硅 (SiC) 场效应晶体管 (FET) 模块。此参考设计可用作高侧或低侧驱动器，也可使用容性模拟负载进行测试。

UCC14240-Q1、UCC14141-Q1 和 UCC14341-Q1 都是集成辅助电源的直接替代产品，每个产品都具有不同的目标输入电压和输出功率。

UCC14xxx-Q1 信息：

  • UCC14240-Q1
    • 隔离：基础型
    • 输入电压 (V)：24（21 至 27）
    • 输出电压 (V)：25（18 至 25）
    • 功率输出 (W)：2
  • (...)
测试报告: PDF
封装 引脚 CAD 符号、封装和 3D 模型
SOIC (DW) 16 Ultra Librarian
应遵守 TI 评估类商品的标准条款与条件。

订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

推荐产品可能包含与 TI 此产品相关的参数、评估模块或参考设计。

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