SBAK020 April   2025 ADC3683-SEP

PRODUCTION DATA  

  1.   1
  2.   Single-Event Effects Test Report of the ADC3683-SEP dual 18-bit 65-MSPS ADC
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects
  6. 3 Irradiation Facility and Setup
  7. 4 Depth, Range, and LETEFF Calculations
  8. 5 Test Setup and Procedures
  9. 6 Destructive Single-Event Effects (DSEE)
  10. 7 Single-Event Transients (SET)
  11. 8 Event Rate Calculations
  12. 9 Summary
  13. 10References

2 Single-Event Effects

The primary concern of interest for the ADC3683-SEP is the robustness against Single-Event Latch-up (SEL) and Single -Event Functional Interrupt (SEFI)

In CMOS technologies, such as the TI 65nm CMOS (C021) process used on the ADC3683-SEP, the CMOS circuitry introduces a potential for SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts) [1, 2]. The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current). This current between power and ground persists or is latched until power is removed, the device is reset, or until the device is destroyed by the high-current state. The ADC3683-SEP was tested for SEL at above the maximum recommended voltage at 1.9V. The device exhibits no SEL with heavy-ions up to LETEFF = 51 MeV × cm2/ mg at flux approximately 105 ions / cm2× s, fluence of approximately 107 ions / cm2, and a die temperature of 125°C, using Ag.

The ADC3683-SEP was characterized for SETs at fluxes between 102 ions / cm2 × s and 105 ions / cm2 × s and with a fluence between 105 ions / cm2and 107 ions / cm2 per run, at room temperature. The ADC3683-SEP is SEFI-free (no power-cycle events). For more details, see Single-Event Transients (SET).