ZHCSE74B September   2015  – February 2017 LMK61E2

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics - Power Supply
    6. 6.6  LVPECL Output Characteristics
    7. 6.7  LVDS Output Characteristics
    8. 6.8  HCSL Output Characteristics
    9. 6.9  OE Input Characteristics
    10. 6.10 ADD Input Characteristics
    11. 6.11 Frequency Tolerance Characteristics
    12. 6.12 Power-On/Reset Characteristics (VDD)
    13. 6.13 I2C-Compatible Interface Characteristics (SDA, SCL)
    14. 6.14 PSRR Characteristics
    15. 6.15 Other Characteristics
    16. 6.16 PLL Clock Output Jitter Characteristics
    17. 6.17 Typical 156.25-MHz Output Phase Noise Characteristics
    18. 6.18 Typical 161.1328125 MHz Output Phase Noise Characteristics
    19. 6.19 Additional Reliability and Qualification
    20. 6.20 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Device Output Configurations
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Device Block-Level Description
      2. 8.3.2  Device Configuration Control
      3. 8.3.3  Register File Reference Convention
      4. 8.3.4  Configuring the PLL
      5. 8.3.5  Integrated Oscillator
      6. 8.3.6  Reference Doubler
      7. 8.3.7  Phase Frequency Detector
      8. 8.3.8  Feedback Divider (N)
      9. 8.3.9  Fractional Circuitry
      10. 8.3.10 Charge Pump
      11. 8.3.11 Loop Filter
      12. 8.3.12 VCO Calibration
      13. 8.3.13 High-Speed Output Divider
      14. 8.3.14 High-Speed Clock Output
      15. 8.3.15 Device Status
        1. 8.3.15.1 Loss of Lock
    4. 8.4 Device Functional Modes
      1. 8.4.1 Interface and Control
    5. 8.5 Programming
      1. 8.5.1 I2C Serial Interface
      2. 8.5.2 Block Register Write
      3. 8.5.3 Block Register Read
      4. 8.5.4 Write SRAM
      5. 8.5.5 Write EEPROM
      6. 8.5.6 Read SRAM
      7. 8.5.7 Read EEPROM
    6. 8.6 EEPROM Map
    7. 8.7 Register Map
      1. 8.7.1 Register Descriptions
        1. 8.7.1.1  VNDRID_BY1 Register; R0
        2. 8.7.1.2  VNDRID_BY0 Register; R1
        3. 8.7.1.3  PRODID Register; R2
        4. 8.7.1.4  REVID Register; R3
        5. 8.7.1.5  SLAVEADR Register; R8
        6. 8.7.1.6  EEREV Register; R9
        7. 8.7.1.7  DEV_CTL Register; R10
        8. 8.7.1.8  XO_CAPCTRL_BY1 Register; R16
        9. 8.7.1.9  XO_CAPCTRL_BY0 Register; R17
        10. 8.7.1.10 DIFFCTL Register; R21
        11. 8.7.1.11 OUTDIV_BY1 Register; R22
        12. 8.7.1.12 OUTDIV_BY0 Register; R23
        13. 8.7.1.13 PLL_NDIV_BY1 Register; R25
        14. 8.7.1.14 PLL_NDIV_BY0 Register; R26
        15. 8.7.1.15 PLL_FRACNUM_BY2 Register; R27
        16. 8.7.1.16 PLL_FRACNUM_BY1 Register; R28
        17. 8.7.1.17 PLL_FRACNUM_BY0 Register; R29
        18. 8.7.1.18 PLL_FRACDEN_BY2 Register; R30
        19. 8.7.1.19 PLL_FRACDEN_BY1 Register; R31
        20. 8.7.1.20 PLL_FRACDEN_BY0 Register; R32
        21. 8.7.1.21 PLL_MASHCTRL Register; R33
        22. 8.7.1.22 PLL_CTRL0 Register; R34
        23. 8.7.1.23 PLL_CTRL1 Register; R35
        24. 8.7.1.24 PLL_LF_R2 Register; R36
        25. 8.7.1.25 PLL_LF_C1 Register; R37
        26. 8.7.1.26 PLL_LF_R3 Register; R38
        27. 8.7.1.27 PLL_LF_C3 Register; R39
        28. 8.7.1.28 PLL_CALCTRL Register; R42
        29. 8.7.1.29 NVMSCRC Register; R47
        30. 8.7.1.30 NVMCNT Register; R48
        31. 8.7.1.31 NVMCTL Register; R49
        32. 8.7.1.32 MEMADR Register; R51
        33. 8.7.1.33 NVMDAT Register; R52
        34. 8.7.1.34 RAMDAT Register; R53
        35. 8.7.1.35 NVMUNLK Register; R56
        36. 8.7.1.36 INT_LIVE Register; R66
        37. 8.7.1.37 SWRST Register; R72
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Jitter Considerations in Serdes Systems
      2. 9.2.2 Frequency Margining
        1. 9.2.2.1 Fine Frequency Margining
        2. 9.2.2.2 Coarse Frequency Margining
      3. 9.2.3 Design Requirements
        1. 9.2.3.1 Detailed Design Procedure
          1. 9.2.3.1.1 Custom Design With WEBENCH® Tools
          2. 9.2.3.1.2 Device Selection
          3. 9.2.3.1.3 VCO Frequency Calculation
          4. 9.2.3.1.4 Device Configuration
          5. 9.2.3.1.5 PLL Loop Filter Design
          6. 9.2.3.1.6 Spur Mitigation Techniques
            1. 9.2.3.1.6.1 Phase Detection Spur
            2. 9.2.3.1.6.2 Integer Boundary Fractional Spur
            3. 9.2.3.1.6.3 Primary Fractional Spur
            4. 9.2.3.1.6.4 Sub-Fractional Spur
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Ensured Thermal Reliability
      2. 11.1.2 Best Practices for Signal Integrity
      3. 11.1.3 Recommended Solder Reflow Profile
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
        1. 12.1.1.1 使用 WEBENCH® 工具定制设计方案
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

12 器件和文档支持

12.1 器件支持

12.1.1 开发支持

相关开发支持，请参见以下文档：

12.1.1.1 使用 WEBENCH® 工具定制设计方案

请单击此处，使用 LMK61E2 器件并借助 WEBENCH® 电源设计器创建定制设计方案。

  1. 在开始阶段键入输出电压 (VIN)、输出电压 (VOUT) 和输出电流 (IOUT) 要求。
  2. 使用优化器拨盘优化关键设计参数，如效率、封装和成本。
  3. 将生成的设计与德州仪器 (TI) 的其他解决方案进行比较。

WEBENCH Power Designer 提供一份定制原理图以及罗列实时价格和组件可用性的物料清单。

在多数情况下，可执行以下操作：

  • 运行电气仿真，观察重要波形以及电路性能
  • 运行热性能仿真，了解电路板热性能
  • 将定制原理图和布局方案导出至常用 CAD 格式
  • 打印设计方案的 PDF 报告并与同事共享

有关 WEBENCH 工具的详细信息，请访问 www.ti.com/WEBENCH。

12.2 文档支持

12.2.1 相关文档

相关文档如下：

12.3 接收文档更新通知

要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击右上角的提醒我 (Alert me) 注册后，即可每周定期收到已更改的产品信息。有关更改的详细信息，请查阅已修订文档中包含的修订历史记录。

12.4 社区资源

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.5 商标

PLLatinum, E2E are trademarks of Texas Instruments.

WEBENCH is a registered trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

12.6 静电放电警告

esds-image

这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损伤。

12.7 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.