ZHCSNH1C May   2021  – November 2022 DLPC6540

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Electrical Characteristics
    6. 6.6  Pin Electrical Characteristics
    7. 6.7  DMD HSSI Electrical Characteristics
    8. 6.8  DMD Low-Speed LVDS Electrical Characteristics
    9. 6.9  V-by-One Interface Electrical Characteristics
    10. 6.10 USB Electrical Characteristics
    11. 6.11 System Oscillator Timing Requirements
    12. 6.12 Power Supply and Reset Timing Requirements
    13. 6.13 DMD HSSI Timing Requirements
    14. 6.14 DMD Low-Speed LVDS Timing Requirements
    15. 6.15 V-by-One Interface General Timing Requirements
    16. 6.16 Source Frame Timing Requirements
    17. 6.17 Synchronous Serial Port Interface Timing Requirements
    18. 6.18 Master and Slave I2C Interface Timing Requirements
    19. 6.19 Programmable Output Clock Timing Requirements
    20. 6.20 JTAG Boundary Scan Interface Timing Requirements (Debug Only)
    21. 6.21 JTAG ARM Multi-Ice Interface Timing Requirements (Debug Only)
    22. 6.22 Multi-Trace ETM Interface Timing Requirements
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Sources
      2. 7.3.2 Processing Delays
      3. 7.3.3 V-by-One Interface
      4. 7.3.4 DMD (HSSI) Interface
      5. 7.3.5 Program Memory Flash Interface
      6. 7.3.6 GPIO Supported Functionality
      7. 7.3.7 Debug Support
    4. 7.4 Device Operational Modes
      1. 7.4.1 Standby Mode
      2. 7.4.2 Active Mode
        1. 7.4.2.1 Normal Configuration
  8. 8 Power Supply Recommendations
    1. 8.1 Power Supply Management
    2. 8.2 Hot Plug Usage
    3. 8.3 Power Supplies for Unused Input Source Interfaces
    4. 8.4 Power Supplies
      1. 8.4.1 1.15-V Power Supplies
      2. 8.4.2 1.21V Power Supply
      3. 8.4.3 1.8-V Power Supplies
      4. 8.4.4 3.3-V Power Supplies
  9. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 General Layout Guidelines
      2. 9.1.2 Power Supply Layout Guidelines
      3. 9.1.3 Layout Guidelines for Internal Controller PLL Power
      4. 9.1.4 Layout Guideline for DLPC6540 Reference Clock
        1. 9.1.4.1 Recommended Crystal Oscillator Configuration
      5. 9.1.5 V-by-One Interface Layout Considerations
      6. 9.1.6 USB Interface Layout Considerations
      7. 9.1.7 DMD Interface Layout Considerations
      8. 9.1.8 General Handling Guidelines for Unused CMOS-Type Pins
      9. 9.1.9 Maximum Pin-to-Pin, PCB Interconnects Etch Lengths
    2. 9.2 Thermal Considerations
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 第三方产品免责声明
      2. 10.1.2 Device Nomenclature
        1. 10.1.2.1 Device Markings
        2. 10.1.2.2 Package Data
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 术语表
      1. 10.6.1 Video Timing Parameter Definitions
  11. 11Mechanical, Packaging, and Orderable Information
    1.     79

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7.3.5 Program Memory Flash Interface

The DLPC6540 provides three external program memory chip selects for devices to access the program memory interface. These are detailed in Table 7-16.

Table 7-16 Program Memory Interface Chip Selects
CHIP SELECT NAME CHIP SELECT USE DATA BUS WIDTH ACCESS TIME MAXIMUM SIZE SUPPORTED (1)
PM_CSZ_0 Boot FLASH only - Required (2) 16 bits < = 120ns 256Mb
PM_CSZ_1 Additional Peripheral Device (or additional FLASH) - Optional 16 bits < = 120ns 256Mb
PM_CSZ_2 Additional Peripheral Device - Optional 16 bits < = 120ns 256Mb
(1) Using GPIO_47 as additional address bit
(2) Boot FLASH type supported is Standard NOR parallel FLASH, single or multi-bank.

FLASH access timing is software programmable with up to 31 wait states. Additional information about read and write wait state timing is provided in Table 7-17 and Figure 7-1.

Table 7-17 Program Memory Wait State Timing
PARAMETER EQUATION (1)
TWSR: Wait State Resolution 6ns
Read Wait States
(Number of Read Wait States for each CSz read access)		 ROUNDUP(MAX(TACC, TCE,TOE)/TWSR-N) (2)(3)
Write Wait States for TCSand TAS
(Time from CS/Address activation to WRZ assertion)		 ROUNDUP(MAX(TCS+5ns, TAS+5ns)/TWSR-N) (2)
Write Wait States for TWP and TDS
(Time from WRZ assertion to WEZ de-assertion)		 ROUNDUP(MAX(TWP+5ns, TDS+5ns)/TWSR-N) (2)
Write Wait States for TCHand TDH
(Time from CS/Address activation to WRZ assertion)		 ROUNDUP(MAX(TCH+5ns, TDH+5ns)/TWSR-N) (2)
(1)
  1. TACC: Read Access Time (ADDR to DATA valid) – (address valid to DATA valid)
  2. TCE: Read Access Time (CSZ to DATA valid) – (chip select active to DATA valid)
  3. TOE: Read Access Time (OEZ to DATA valid) – (output enable active to DATA valid)
  4. TCS: CSZ Setup Time (Writes) – (chip select active before negedge(WEZ)
  5. TCS: Address Setup Time (Writes) – (address valid before negedge(WEZ)
  6. TAS: Address Setup Time (Writes) – (address valid before negedge(WEZ)
  7. TWP: Write Pulse Width (Writes) – (WEZ active low time)
  8. TDS: Data Setup Time (Writes) – (DATA valid before posedge(WEZ)
  9. TCH: CSZ Hold Time (Writes) – (CSZ held active after posedge(WEZ)
  10. TDH: Data Hold Time (Writes) – (DATA held valid after posedge(WEZ)
(2) Requires a minimum of at least 1 wait state
(3) Assumes a maximum single direction trace length of 90 mm (3.5 inches)
GUID-286A74F3-AB49-41C4-8CB4-4B664B100BC2-low.gif Figure 7-1 Program Memory Interface Timing Diagram