ZHCSRK4A April   2020  – September 2020 CC2640R2L

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Functional Block Diagram
  5. 5 Revision History
  6. 6 Device Comparison
    1. 6.1 Related Products
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Pin Diagram – RHB Package
    4. 7.4 Signal Descriptions – RHB Package
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Consumption Summary
    5. 8.5  General Characteristics
    6. 8.6  125-kbps Coded (Bluetooth 5) – RX
    7. 8.7  125-kbps Coded (Bluetooth 5) – TX
    8. 8.8  500-kbps Coded (Bluetooth 5) – RX
    9. 8.9  500-kbps Coded (Bluetooth 5) – TX
    10. 8.10 1-Mbps GFSK (Bluetooth low energy) – RX
    11. 8.11 1-Mbps GFSK (Bluetooth low energy) – TX
    12. 8.12 2-Mbps GFSK (Bluetooth 5) – RX
    13. 8.13 2-Mbps GFSK (Bluetooth 5) – TX
    14. 8.14 24-MHz Crystal Oscillator (XOSC_HF)
    15. 8.15 32.768-kHz Crystal Oscillator (XOSC_LF)
    16. 8.16 48-MHz RC Oscillator (RCOSC_HF)
    17. 8.17 32-kHz RC Oscillator (RCOSC_LF)
    18. 8.18 ADC Characteristics
    19. 8.19 Temperature Sensor
    20. 8.20 Battery Monitor
    21. 8.21 Synchronous Serial Interface (SSI)
    22. 8.22 DC Characteristics
    23. 8.23 Thermal Resistance Characteristics
    24. 8.24 Timing Requirements
    25. 8.25 Switching Characteristics
    26. 8.26 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  Functional Block Diagram
    3. 9.3  Main CPU
    4. 9.4  RF Core
    5. 9.5  Memory
    6. 9.6  Debug
    7. 9.7  Power Management
    8. 9.8  Clock Systems
    9. 9.9  General Peripherals and Modules
    10. 9.10 Voltage Supply Domains
    11. 9.11 System Architecture
  10. 10Application, Implementation, and Layout
    1. 10.1 Application Information
    2. 10.2 5 × 5 External Differential (5XD) Application Circuit
      1. 10.2.1 Layout
  11. 11Device and Documentation Support
    1. 11.1  Device Nomenclature
    2. 11.2  Tools and Software
    3. 11.3  Documentation Support
    4. 11.4  支持资源
    5. 11.5  Texas Instruments Low-Power RF Website
    6. 11.6  Low-Power RF eNewsletter
    7. 11.7  Trademarks
    8. 11.8  静电放电警告
    9. 11.9  Export Control Notice
    10. 11.10 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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8.5 General Characteristics

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
FLASH MEMORY
Supported flash erase cycles before failure(1)100k Cycles
Maximum number of write operations per row before erase(2)83write operations
Flash retention105°C11.4Years at 105°C
Flash page/sector erase currentAverage delta current12.6mA
Flash page/sector size4KB
Flash write currentAverage delta current, 4 bytes at a time8.15mA
Flash page/sector erase time(3)8ms
Flash write time(3)4 bytes at a time8µs
(1) Aborting flash during erase or program modes is not a safe operation.
(2) Each row is 2048 bits (or 256 Bytes) wide.
(3) This number is dependent on Flash aging and will increase over time and erase cycles.