ZHCSQ71 March   2022 CC1311P3

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 功能方框图
  5. 5 Revision History
  6. 6 Device Comparison
  7. 7 Pin Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Connections for Unused Pins and Modules
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 861 MHz to 1054 MHz - Receive (RX)
    11. 8.11 861 MHz to 1054 MHz - Transmit (TX) 
    12. 8.12 861 MHz to 1054 MHz - PLL Phase Noise Wideband Mode
    13. 8.13 861 MHz to 1054 MHz - PLL Phase Noise Narrowband Mode
    14. 8.14 359 MHz to 527 MHz - Receive (RX)
    15. 8.15 359 MHz to 527 MHz - Transmit (TX) 
    16. 8.16 359 MHz to 527 MHz - PLL Phase Noise
    17. 8.17 Timing and Switching Characteristics
      1. 8.17.1 Reset Timing
      2. 8.17.2 Wakeup Timing
      3. 8.17.3 Clock Specifications
        1. 8.17.3.1 48 MHz Crystal Oscillator (XOSC_HF)
        2. 8.17.3.2 48 MHz RC Oscillator (RCOSC_HF)
        3. 8.17.3.3 32.768 kHz Crystal Oscillator (XOSC_LF)
        4. 8.17.3.4 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.17.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.17.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       38
      5. 8.17.5 UART
        1. 8.17.5.1 UART Characteristics
    18. 8.18 Peripheral Characteristics
      1. 8.18.1 ADC
        1. 8.18.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.18.2 DAC
        1. 8.18.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.18.3 Temperature and Battery Monitor
        1. 8.18.3.1 Temperature Sensor
        2. 8.18.3.2 Battery Monitor
      4. 8.18.4 Comparator
        1. 8.18.4.1 Continuous Time Comparator
      5. 8.18.5 GPIO
        1. 8.18.5.1 GPIO DC Characteristics
    19. 8.19 Typical Characteristics
      1. 8.19.1 MCU Current
      2. 8.19.2 RX Current
      3. 8.19.3 TX Current
      4. 8.19.4 RX Performance
      5. 8.19.5 TX Performance
      6. 8.19.6 ADC Performance
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Proprietary Radio Formats
    4. 9.4  Memory
    5. 9.5  Cryptography
    6. 9.6  Timers
    7. 9.7  Serial Peripherals and I/O
    8. 9.8  Battery and Temperature Monitor
    9. 9.9  µDMA
    10. 9.10 Debug
    11. 9.11 Power Management
    12. 9.12 Clock Systems
    13. 9.13 Network Processor
  10. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
  11. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
      1. 11.2.1 SimpleLink™ Microcontroller Platform
    3. 11.3 Documentation Support
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.11 861 MHz to 1054 MHz - Transmit (TX) 

Measured on the CC1311-P3EM-7XD7793-PA915 reference design with Tc = 25 °C, VDDS = 3.0 V with
DC/DC enabled and high power PA connected to VDDS using 2-GFSK, 50 kbps, ±25 kHz deviation unless otherwise noted.
All measurements are performed at the antenna input with a combined RX and TX path, except for high power PA which is measured at a dedicated antenna connection. All measurements are performed conducted. (1)
 
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
General parameters
Max output power, boost mode
Regular PA		 VDDR = 1.95 V
Minimum supply voltage (VDDS ) for boost mode is 2.1 V
868 MHz and 915 MHz		 14 dBm
Max output power,
Regular PA		 868 MHz and 915 MHz 13 dBm
Max output power,
High power PA		 915 MHz
VDDS = 3.3V		 20 dBm
Output power programmable range
Regular PA		 868 MHz and 915 MHz 24 dB
Output power programmable range
High power PA		 868 MHz and 915 MHz
VDDS = 3.3V		 6 dB
Output power variation over temperature
Regular PA		 +10 dBm setting
Over recommended temperature operating range		 ±2 dB
Output power variation over temperature
Boost mode, regular PA		 +14 dBm setting
Over recommended temperature operating range		 ±1.5 dB
Spurious emissions and harmonics
Spurious emissions (excluding harmonics)
Regular PA(3)		 30 MHz to 1 GHz +14 dBm setting
ETSI restricted bands		 < -54 dBm
+14 dBm setting
ETSI outside restricted bands		 < -36 dBm
1 GHz to 12.75 GHz
(outside ETSI restricted bands)		 +14 dBm setting
measured in 1 MHz bandwidth (ETSI)		 < -30 dBm
Spurious emissions out-of-band
Regular PA, 915 MHz(3)		 30 MHz to 88 MHz
(within FCC restricted bands)		 +14 dBm setting < -56 dBm
88 MHz to 216 MHz
(within FCC restricted bands)		 +14 dBm setting < -52 dBm
216 MHz to 960 MHz
(within FCC restricted bands)		 +14 dBm setting < -50 dBm
960 MHz to 2390 MHz and above 2483.5 MHz (within FCC restricted band) +14 dBm setting <-42 dBm
1 GHz to 12.75 GHz
(outside FCC restricted bands)		 +14 dBm setting < -40 dBm
Spurious emissions out-of-band
High power PA, 915 MHz(3)(4)		 30 MHz to 88 MHz
(within FCC restricted bands)		 +20 dBm setting, VDDS = 3.3 V < -55 dBm
88 MHz to 216 MHz
(within FCC restricted bands)		 +20 dBm setting, VDDS = 3.3 V < -52 dBm
216 MHz to 960 MHz
(within FCC restricted bands)		 +20 dBm setting, VDDS = 3.3 V < -49 dBm
960 MHz to 2390 MHz and above 2483.5 MHz (within FCC restricted band) +20 dBm setting, VDDS = 3.3 V < -41 dBm
1 GHz to 12.75 GHz
(outside FCC restricted bands)		 +20 dBm setting, VDDS = 3.3 V < -20 dBm
Spurious emissions out-of-band
Regular PA, 920.6/928 MHz(3)		 Below 710 MHz
(ARIB T-108)		 +14 dBm setting < -36 dBm
710 MHz to 900 MHz
(ARIB T-108)		 +14 dBm setting < -55 dBm
900 MHz to 915 MHz
(ARIB T-108)		 +14 dBm setting < -55 dBm
930 MHz to 1000 MHz
(ARIB T-108)		 +14 dBm setting < -55 dBm
1000 MHz to 1215 MHz
(ARIB T-108)		 +14 dBm setting < -45 dBm
Above 1215 MHz
(ARIB T-108)		 +14 dBm setting < -30 dBm
Harmonics
Regular PA		 Second harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -30
Third harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -42
Fourth harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -30
Fifth harmonic +14 dBm setting, 868 MHz < -30 dBm
+14 dBm setting, 915 MHz < -42
Harmonics
High power PA		 Second harmonic +20 dBm setting, VDDS = 3.3 V, 915 MHz < -30 dBm
Third harmonic +20 dBm setting, VDDS = 3.3 V, 915 MHz < -42 dBm
Fourth harmonic +20 dBm setting, VDDS = 3.3 V, 915 MHz < -30 dBm
Fifth harmonic +20 dBm setting, VDDS = 3.3 V, 915 MHz < -42 dBm
Adjacent Channel Power
Adjacent channel power, regular 14 dBm PA Adjacent channel, 20 kHz offset. 9.6 kbps, h=0.5 12.5 dBm setting. 868.3 MHz. 14 kHz channel BW -23 dBm
Alternate channel power, regular 14 dBm PA Alternate channel, 40 kHz offset. 9.6 kbps, h=0.5 12.5 dBm setting. 868.3 MHz. 14 kHz channel BW -30 dBm
(1) Some combinations of frequency, data rate and modulation format requires use of external crystal load capacitors for regulatory compliance. More details can be found in the device errata.
(2) Suitable for systems targeting compliance with EN 300 220, EN 303 131, EN 303 204, FCC CFR47 Part 15, ARIB STD-T108.
(3) Spurious emissions increase for supply voltages below 2.2 V. As such, care must be taken to ensure regulatory requirements are met when operating at low supply voltage levels. An alternative is to use the Sub-1 GHz PA below 2.2 V.