ZHCSQ71 March   2022 CC1311P3

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. 功能方框图
  5. Revision History
  6. Device Comparison
  7. Pin Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Connections for Unused Pins and Modules
  8. Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 861 MHz to 1054 MHz - Receive (RX)
    11. 8.11 861 MHz to 1054 MHz - Transmit (TX) 
    12. 8.12 861 MHz to 1054 MHz - PLL Phase Noise Wideband Mode
    13. 8.13 861 MHz to 1054 MHz - PLL Phase Noise Narrowband Mode
    14. 8.14 359 MHz to 527 MHz - Receive (RX)
    15. 8.15 359 MHz to 527 MHz - Transmit (TX) 
    16. 8.16 359 MHz to 527 MHz - PLL Phase Noise
    17. 8.17 Timing and Switching Characteristics
      1. 8.17.1 Reset Timing
      2. 8.17.2 Wakeup Timing
      3. 8.17.3 Clock Specifications
        1. 8.17.3.1 48 MHz Crystal Oscillator (XOSC_HF)
        2. 8.17.3.2 48 MHz RC Oscillator (RCOSC_HF)
        3. 8.17.3.3 32.768 kHz Crystal Oscillator (XOSC_LF)
        4. 8.17.3.4 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.17.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.17.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       38
      5. 8.17.5 UART
        1. 8.17.5.1 UART Characteristics
    18. 8.18 Peripheral Characteristics
      1. 8.18.1 ADC
        1. 8.18.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.18.2 DAC
        1. 8.18.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.18.3 Temperature and Battery Monitor
        1. 8.18.3.1 Temperature Sensor
        2. 8.18.3.2 Battery Monitor
      4. 8.18.4 Comparator
        1. 8.18.4.1 Continuous Time Comparator
      5. 8.18.5 GPIO
        1. 8.18.5.1 GPIO DC Characteristics
    19. 8.19 Typical Characteristics
      1. 8.19.1 MCU Current
      2. 8.19.2 RX Current
      3. 8.19.3 TX Current
      4. 8.19.4 RX Performance
      5. 8.19.5 TX Performance
      6. 8.19.6 ADC Performance
  9. Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Proprietary Radio Formats
    4. 9.4  Memory
    5. 9.5  Cryptography
    6. 9.6  Timers
    7. 9.7  Serial Peripherals and I/O
    8. 9.8  Battery and Temperature Monitor
    9. 9.9  µDMA
    10. 9.10 Debug
    11. 9.11 Power Management
    12. 9.12 Clock Systems
    13. 9.13 Network Processor
  10. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
  11. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
      1. 11.2.1 SimpleLink™ Microcontroller Platform
    3. 11.3 Documentation Support
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

Power Consumption - Radio Modes

When measured on the CC1311-P3EM-7XD7793-PA915 reference design with Tc = 25 °C, VDDS = 3.6 V with DC/DC enabled unless otherwise noted.
High power PA connected to VDDS unless otherwise noted.
Using boost mode (increasing VDDR up to 1.95 V), will increase system current by 15% (does not apply to TX +14 dBm setting where this current is already included).
Relevant Icore and Iperi currents are included in below numbers.
PARAMETER TEST CONDITIONS TYP UNIT
Radio receive current, 868 MHz 5.4 mA

Radio transmit current
Regular PA

0 dBm output power setting
868 MHz
7.4 mA
+10 dBm output power setting
868 MHz
13.9 mA

Radio transmit current
Boost mode, regular PA

+14 dBm output power setting
868 MHz
24.9 mA
Radio transmit current
High-power PA
Transmit (TX), +20 dBm output power setting
915 MHz, VDDS = 3.3 V
65 mA