ZHCSDT4D June   2015  – September 2020 BQ29209-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Options
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Recommended Cell Balancing Configurations
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Voltage Protection
      2. 8.1.2 Cell Balancing
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Protection (OUT) Timing
      2. 8.3.2 Cell Voltage > VPROTECT
      3. 8.3.3 Cell Connection Sequence
      4. 8.3.4 Cell Balance Enable Control
      5. 8.3.5 Cell Balance Configuration
      6. 8.3.6 Cell Imbalance Auto-Detection (Via Cell Voltage)
      7. 8.3.7 Customer Test Mode
      8. 8.3.8 Test Conditions
    4. 8.4 Device Functional Modes
      1. 8.4.1 NORMAL Mode
      2. 8.4.2 PROTECTION Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Battery Connection
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
    3. 9.3 System Example
      1. 9.3.1 External Cell Balancing
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DRB|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

Typical values stated where TA = 25°C and VDD = 7.2 V. Minimum and maximum values stated where TA = –40°C to 105°C and VDD = 4 V to 10 V (unless otherwise noted).
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VPROTECTOvervoltage detection voltage4.3V
VHYSOvervoltage detection hysteresis200300400mV
VOAOvervoltage detection accuracyTA = 25°C–1010mV
VOA_DRIFTOvervoltage threshold temperature driftTA = 0°C to 60°C–0.40.4mV°/C
TA = –40°C to 110°C–0.60.6
XDELAYOvervoltage delay time scale factorTA = 0°C to 60°C
Note: Does not include external capacitor variation.
6912s/µF
TA = –40°C to 110°C
Note: Does not include external capacitor variation.
5.5913.5
XDELAY_CTM(1)Overvoltage delay time scale factor in Customer Test Mode0.08s/µF
ICD(CHG)Overvoltage detection charging current150nA
ICD(DSG)Overvoltage detection discharging current60µA
VCDOvervoltage detection external capacitor comparator threshold1.2V
ICCSupply current(VC2–VC1) = (VC1–GND) = 3.5 V (See Figure 8-5.)36µA
VOUTOUT pin drive voltage(VC2–VC1) or (VC1–GND) > VPROTECT,
VDD = 10 V, IOH = 0
68.259.5V
(VC2–VC1) or (VC1–GND) = VPROTECT, VDD = VPROTECT,
IOH = –100 µA, TA = 0°C to 60°C
1.752.5V
(VC2–VC1) and (VC1–GND) < VPROTECT ,
IOL = 100 µA, TA = 25°C
200mV
(VC2–VC1) and (VC1–GND) < VPROTECT ,
IOL = 0 µA, TA = 25°C
010mV
VC2 = VC1 = VDD = 4 V, IOL = 100 µA200mV
IOHHigh-level output currentOUT = 1.75 V, (VC2–VC1) or (VC1–GND) = VPROTECT, VDD = VPROTECT to 10 V, TA = 0°C to 60°C–100µA
IOLLow-level output currentOUT = 0.05 V, (VC2–VC1) or (VC1–GND) < VPROTECT, VDD = VPROTECT to 10 V, TA = 0°C to 60°C3085µA
IOH_ZVHigh-level short-circuit output currentOUT = 0 V, (VC2–VC1) = (VC1–GND) = VPROTECT
VDD = 4 to 10 V
–8mA
IINInput current at VCx pinsMeasured at VC1, (VC2–VC1) = (VC1–GND) = 3.5 V,
TA = 0°C to 60°C (See Figure 8-5.)
–0.20.2µA
Measured at VC2, (VC2–VC1) = (VC1–GND) = 3.5 V,
TA = 0°C to 60°C (See Figure 8-5.)
2.5µA
VMM_DET_ONCell mismatch detection threshold for turning ON(VC2–VC1) versus (VC1–GND) and vice-versa when cell balancing is enabled. VC2 = VDD = 7.6 V173045mV
VMM_DET_OFFCell mismatch detection threshold for turning OFFDelta between (VC2–VC1) and (VC1–GND) when cell balancing is disabled. VC2 = VDD = 7.6 V–909mV
VCB_EN_ONCell balance enable ON thresholdActive LOW pin at CB_EN1V
VCB_EN_OFFCell balance enable OFF thresholdActive HIGH at CB_EN2.2V
ICB_ENCell balance enable ON input currentCB_EN = GND (See Figure 8-6.)0.2µA
RCB1intInternal cell balance switch resistanceCB_EN = GND300Ω
RCB2intInternal cell balance switch resistanceCB_EN = GND235Ω
Specified by design. Not 100% tested in production.