产品详细信息

Bus voltage (Max) (V) 100 Power switch MOSFET Input VCC (Min) (V) 9 Input VCC (Max) (V) 14 Peak output current (A) 2 Rise time (ns) 10 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 8 Rating Catalog Number of channels (#) 2 Fall time (ns) 10 Prop delay (ns) 25 Iq (uA) 10 Input threshold TTL Channel input logic TTL Negative voltage handling at HS pin (V) -1 Features
Bus voltage (Max) (V) 100 Power switch MOSFET Input VCC (Min) (V) 9 Input VCC (Max) (V) 14 Peak output current (A) 2 Rise time (ns) 10 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 8 Rating Catalog Number of channels (#) 2 Fall time (ns) 10 Prop delay (ns) 25 Iq (uA) 10 Input threshold TTL Channel input logic TTL Negative voltage handling at HS pin (V) -1 Features
SOIC (D) 8 19 mm² 4.9 x 3.9 WSON (DPR) 10 16 mm² 4 x 4
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFETs
  • Independent High- and Low-Driver Logic Inputs
  • Bootstrap Supply Voltage up to 118 V DC
  • Fast Propagation Times (25-ns Typical)
  • Drives 1000-pF Load With 8-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (3-ns
    Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Pin Compatible With HIP2100/HIP2101
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFETs
  • Independent High- and Low-Driver Logic Inputs
  • Bootstrap Supply Voltage up to 118 V DC
  • Fast Propagation Times (25-ns Typical)
  • Drives 1000-pF Load With 8-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (3-ns
    Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Pin Compatible With HIP2100/HIP2101

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

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技术文档

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类型 标题 下载最新的英文版本 日期
* 数据表 LM5100A/B/C, LM5101A/B/C 3-A, 2-A, and 1-A High-Voltage, High-Side and Low-Side Gate Drivers 数据表 (Rev. Q) 2015年 12月 3日
应用手册 Understanding and comparing peak current capability of gate drivers 2021年 3月 30日
应用手册 了解峰值源电流和灌电流 (Rev. A) 下载英文版本 (Rev.A) 2020年 4月 29日
应用手册 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) 下载英文版本 (Rev.A) 2020年 4月 29日
更多文献资料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
技术文章 How to achieve higher system robustness in DC drives, part 3: minimum input pulse 2018年 9月 19日
技术文章 How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 2018年 5月 30日
技术文章 Boosting efficiency for your solar inverter designs 2018年 5月 24日
应用手册 AN-1317 Selection of External Bootstrap Diode for LM510X Devices (Rev. B) 2018年 5月 4日
技术文章 How to achieve higher system robustness in DC drives, part 1: negative voltage 2018年 4月 17日
更多文献资料 MOSFET 和 IGBT 栅极驱动器电路的基本原理 下载最新的英文版本 (Rev.A) 2018年 4月 17日
用户指南 AN-1331 LM5033 Evaluation Board (Rev. A) 2013年 5月 6日
应用手册 App Note 1317 Selection of Ext Bootstrp Diode for LM510X Devices 下载最新的英文版本 (Rev.B) 2004年 5月 1日

设计与开发

有关其他条款或所需资源,请点击下面的任何链接来查看详情页面。

仿真模型

LM5101B TINA-TI Transient Reference Design

SNOM357.TSC (780 KB) - TINA-TI Reference Design
仿真模型

LM5101B TINA-TI Transient Spice Model

SNOM358.ZIP (12 KB) - TINA-TI Spice Model
仿真模型

LM5101B PSpice Transient Model

SNOM365.ZIP (77 KB) - PSpice Model
仿真模型

LM5101B Unencrypted PSpice Transient Model

SNOM568.ZIP (2 KB) - PSpice Model
仿真工具

PSPICE-FOR-TI — PSPICE® for TI design and simulation tool

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参考设计

TIDA-01292 — 适用于低频离线 UPS 和逆变器且不带散热器的 650W 功率级参考设计

此参考设计是一款专为低频(基于变压器)单相 UPS(由 12V 电池供电)设计的 650W 逆变器功率级。此设计凭借采用 SON5x6 封装且具有极低 RDS(on) 和低栅极电荷 (Qg) 的 TI SMD MOSFET,实现小外形尺寸和高效率的解决方案。通过在全桥功率级的每个桥臂上并联使用两个器件,该功率级消除了散热器需求,从而降低了总体系统成本。
封装 引脚 下载
SOIC (D) 8 了解详情
WSON (DPR) 10 了解详情

订购与质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/FIT 估算
  • 材料成分
  • 认证摘要
  • 持续可靠性监测

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