ZHCSOY9 december   2021 UCC28781

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Detailed Pin Description
      1. 7.3.1  BUR Pin (Programmable Burst Mode)
      2. 7.3.2  FB Pin (Feedback Pin)
      3. 7.3.3  REF Pin (Internal 5-V Bias)
      4. 7.3.4  VDD Pin (Device Bias Supply)
      5. 7.3.5  P13 and SWS Pins
      6. 7.3.6  S13 Pin
      7. 7.3.7  IPC Pin (Intelligent Power Control Pin)
      8. 7.3.8  RUN Pin (Driver and Bias Source for Isolator)
      9. 7.3.9  PWMH and AGND Pins
      10. 7.3.10 PWML and PGND Pins
      11. 7.3.11 SET Pin
      12. 7.3.12 RTZ Pin (Sets Delay for Transition Time to Zero)
      13. 7.3.13 RDM Pin (Sets Synthesized Demagnetization Time for ZVS Tuning)
      14. 7.3.14 XCD Pin
      15. 7.3.15 CS, VS, and FLT Pins
    4. 7.4 Device Functional Modes
      1. 7.4.1  Adaptive ZVS Control with Auto-Tuning
      2. 7.4.2  Dead-Time Optimization
      3. 7.4.3  EMI Dither and Dither Fading Function
      4. 7.4.4  Control Law Across Entire Load Range
      5. 7.4.5  Adaptive Amplitude Modulation (AAM)
      6. 7.4.6  Adaptive Burst Mode (ABM)
      7. 7.4.7  Low Power Mode (LPM)
      8. 7.4.8  First Standby Power Mode (SBP1)
      9. 7.4.9  Second Standby Power Mode (SBP2)
      10. 7.4.10 Startup Sequence
      11. 7.4.11 Survival Mode of VDD (INT_STOP)
      12. 7.4.12 System Fault Protections
        1. 7.4.12.1  Brown-In and Brown-Out
        2. 7.4.12.2  Output Over-Voltage Protection (OVP)
        3. 7.4.12.3  输入过压保护 (IOVP)
        4. 7.4.12.4  FLT 引脚上的过热保护 (OTP)
        5. 7.4.12.5  CS 引脚上的过热保护 (OTP)
        6. 7.4.12.6  可编程过功率保护 (OPP)
        7. 7.4.12.7  峰值功率限制 (PPL)
        8. 7.4.12.8  输出短路保护 (SCP)
        9. 7.4.12.9  过流保护 (OCP)
        10. 7.4.12.10 External Shutdown
        11. 7.4.12.11 Internal Thermal Shutdown
      13. 7.4.13 Pin Open/Short Protections
        1. 7.4.13.1 Protections on CS pin Fault
        2. 7.4.13.2 Protections on P13 pin Fault
        3. 7.4.13.3 Protections on RDM and RTZ pin Faults
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application Circuit
      1. 8.2.1 Design Requirements for a 60-W, 15-V ZVSF Bias Supply Application with a DC Input
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Bulk Capacitance and Minimum Bulk Voltage
        2. 8.2.2.2 Transformer Calculations
          1. 8.2.2.2.1 Primary-to-Secondary Turns Ratio (NPS)
          2. 8.2.2.2.2 Primary Magnetizing Inductance (LM)
          3. 8.2.2.2.3 Primary Winding Turns (NP)
          4. 8.2.2.2.4 Secondary Winding Turns (NS)
          5. 8.2.2.2.5 Auxiliary Winding Turns (NA)
          6. 8.2.2.2.6 Winding and Magnetic Core Materials
        3. 8.2.2.3 Calculation of ZVS Sensing Network
        4. 8.2.2.4 Calculation of BUR Pin Resistances
        5. 8.2.2.5 Calculation of Compensation Network
      3. 8.2.3 Application Curves
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1  General Considerations
      2. 10.1.2  RDM and RTZ Pins
      3. 10.1.3  SWS Pin
      4. 10.1.4  VS Pin
      5. 10.1.5  BUR Pin
      6. 10.1.6  FB Pin
      7. 10.1.7  CS Pin
      8. 10.1.8  AGND Pin
      9. 10.1.9  PGND Pin
      10. 10.1.10 Thermal Pad
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Receiving Notification of Documentation Updates
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 静电放电警告
    5. 11.5 术语表
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

PWML and PGND Pins

The PWML pin is the primary-side switch gate-drive, for which ground return is referenced to the PGND pin. The strong driver with 0.5-A peak source and 1.9-A peak sink capability can control either a silicon power MOSFET with a higher gate-to-source capacitance, a cascode GaN, an E-mode gate-injection-transistor (GIT) GaN with continuous on-state current, or a GaN power IC with logic PWM input.

The maximum voltage level of PWML is clamped to the P13 pin voltage. The 13-V clamped gate voltage provides an optimal gate-drive for low on-state resistance and lower gate-driving loss. An external gate resistor in parallel with a fast recovery diode can be used to further reduce the turn-on speed without compromising the turn-off switching loss. Slower turn-on speed of the primary switch mitigates the voltage stress across the secondary-side rectifier when the SR switch is disabled in deep light-load condition, and reduces the switching-node dV/dt to a safe level for reducing stress on the high-voltage isolating SR driver. A decoupling capacitor much larger than the PWML capacitive loading should be placed between P13 and PGND pins to decouple the gate-drive loop to allow operation at higher switching frequency. The 15-ns propagation delay of the PWML driver enables a higher frequency operation and more consistent ZVS switching.

Figure 7-14 and Figure 7-15 shows the example PWML driving network for a GIT GaN device and for a silicon MOSFET, respectively. For the GIT GaN device case, resistor RG2 controls the turn-on speed. The turn-off speed can be maintained by the two fast recovery diodes, DG1 and DG2. RG1 provides a continuous driving path to maintain the on state and low on-resistance (RDS(on)) of a GIT GaN. CG avoids the small RG2 from affecting the on state current. PGND can be directly connected to the separate source terminal of a GIT GaN to achieve a Kelvin connection, so the driver loop parasitic inductance can be decoupled.

GUID-20211107-SS0I-200W-JHD8-HW3RVLQVNQJX-low.svgFigure 7-14 Driving a GIT GaN Device
GUID-20211107-SS0I-MW79-LCZZ-1FCBKWS8FWN9-low.svgFigure 7-15 Driving a Si MOSFET

An internal low-voltage level shifter is included between PGND and the ground return pin for analog control signals (AGND), so PGND can be connected separately to the source pin of the Si-MOSFET (QL) to achieve a Kelvin connection, as shown in Figure 7-15. When hard switching condition occurs, the lumped parasitic capacitor on the switch node is discharged, so a positive voltage spike is created across RCS. In soft switching condition, the negative magnetizing current flowing through RCS can create a negative voltage spike on RCS. The level shifter is designed to handle 5-V positive transient spike and -1-V negative stress between PGND pin and AGND pin.