ZHCSK61B August   2019  – December  2019 TPS66120 , TPS66121

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     功能表
      1.      TPS6612x 方框图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Recommended Supply Load Capacitance
    5. 6.5  Thermal Information
    6. 6.6  PPHV Power Switch Characteristics
    7. 6.7  Power Path Supervisory
    8. 6.8  VBUS LDO Characteristics
    9. 6.9  Thermal Shutdown Characteristics
    10. 6.10 Input-output (I/O) Characteristics
    11. 6.11 Power Consumption Characteristics
    12. 6.12 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 20-V Sink (PPHV Power Path)
        1. 7.3.1.1 PPHV Soft Start
        2. 7.3.1.2 PPHV Reverse Current Protection (RCP)
      2. 7.3.2 Overtemperature Protection
      3. 7.3.3 VBUS Overvoltage Protection (OVP)
      4. 7.3.4 Power Management and Supervisory
        1. 7.3.4.1 Supply Connections
        2. 7.3.4.2 Power Up Sequences
          1. 7.3.4.2.1 Normal Power Up
          2. 7.3.4.2.2 Dead Battery Operation
    4. 7.4 Device Functional Modes
      1. 7.4.1 State Transitions
        1. 7.4.1.1 DISABLED State
        2. 7.4.1.2 SNK State
      2. 7.4.2 SNK FAULT State
      3. 7.4.3 Device Functional Mode Summary
      4. 7.4.4 Enabling the PPHV Sink Path
      5. 7.4.5 Faults
        1. 7.4.5.1 Fault Types
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External VLDO Capacitor (CVLDO)
        2. 8.2.2.2 PPHV, VBUS Power Path Capacitance
        3. 8.2.2.3 VBUS TVS Protection (Optional)
        4. 8.2.2.4 VBUS Schottky Diode Protection (Optional)
        5. 8.2.2.5 VBUS Overvoltage Protection (Optional)
        6. 8.2.2.6 Dead Battery Support
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 相关链接
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)

6.11 Power Consumption Characteristics

Operating under these conditions unless otherwise noted: -10 ℃ ≤ TJ ≤ 85 ℃, 2.85V ≤ VVIN ≤ 5.5V, RIREF = 75 kΩ ±1% overall tolerance
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IVIN_DISABLE Current consumed by VIN(1) VIN = 3.3V, VBUS = 0V,   PPHV = 0V, DISABLED state. Measure IVIN. TPS66120 only. 19 27 µA
VIN = 5V, VBUS = 0V,   PPHV = 0V, DISABLED state. Measure IVIN.  TPS66121 only. 25 36 µA
IVIN_SNK Current consumed by VIN(1) VIN = 3.3V, SNK state. Measure IVIN.  TPS66120 only. VBUS = 5.5V/22V 130 µA
VIN = 5V, SNK state. Measure IVIN.   TPS66121 only. VBUS = 5.5V/22V 215 µA
ISD_VBUS Current consumed by VBUS(1) VIN = 3.3V, PPHV= 0V, DISABLED state.  Measure IVBUS.   TPS66120 only. VBUS = 5.5V 12 26 µA
VBUS = 22V 34 µA
VIN = 5V, PPHV= 0V, DISABLED state.  Measure IVBUS.   TPS66121 only. VBUS = 5.5V 8 µA
VBUS = 22V 30 µA
ISD_VBUS_LDO Current consumed by VBUS(1) VIN = 0V, PPHV= 0V, DISABLED state.  Measure IVBUS. VBUS = 5.5V 45 µA
VBUS = 22V 68 µA
ISD_VBUS_LDO Current consumed by VBUS(1) VIN = 0V, PPHV= 0V, DISABLED state.  Measure IVBUS. VBUS = 5.5V 45 µA
VBUS = 22V 69 µA
IACT_VBUS Current consumed by VBUS(1) VIN = 3.3V,  SNK state.  Measure IVBUS.  TPS66120 only. VBUS = 5.5V 325 µA
VBUS = 22V 360 µA
VIN = 5V,  SNK state.  Measure IVBUS.  TPS66121 only. VBUS = 5.5V 342 µA
VBUS = 22V 377 µA
VOC_VBUS Open circuit voltage, VBUS PPHV = 22V, DISABLED state, no DC loading on VBUS. Measure VVBUS under steady state conditions. 0.8 V
VOC_PPHV Open circuit voltage, PPHV VBUS = 22V, DISABLED state, no DC loading on PPHV. Measure VPPHV under steady state conditions. 0.8 V
(1) Measured with EN0 set to GND or VLDO levels as required for the respective state.