SLVSHK4 December   2025 MCT8376Z-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings AUTO
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 SPI Slave Mode Timings
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Output Stage
      2. 7.3.2  PWM Control Mode (1x PWM Mode)
        1. 7.3.2.1 Analog Hall Input Configuration
        2. 7.3.2.2 Digital Hall Input Configuration
        3. 7.3.2.3 Asynchronous Modulation
        4. 7.3.2.4 Synchronous Modulation
        5. 7.3.2.5 Motor Operation
      3. 7.3.3  Device Interface Modes
        1. 7.3.3.1 Serial Peripheral Interface (SPI)
        2. 7.3.3.2 Hardware Interface
      4. 7.3.4  AVDD and GVDD Linear Voltage Regulator
      5. 7.3.5  Charge Pump
      6. 7.3.6  Slew Rate Control
      7. 7.3.7  Cross Conduction (Dead Time)
      8. 7.3.8  Propagation Delay
      9. 7.3.9  Pin Diagrams
        1. 7.3.9.1 Logic Level Input Pin (Internal Pulldown)
        2. 7.3.9.2 Logic Level Input Pin (Internal Pullup)
        3. 7.3.9.3 Open Drain Pin
        4. 7.3.9.4 Push Pull Pin
        5. 7.3.9.5 Seven Level Input Pin
      10. 7.3.10 Current Sense Amplifier Output (SO)
      11. 7.3.11 Active Demagnetization
        1. 7.3.11.1 Automatic Synchronous Rectification Mode (ASR Mode)
          1. 7.3.11.1.1 Automatic Synchronous Rectification in Commutation
          2. 7.3.11.1.2 Automatic Synchronous Rectification in PWM Mode
        2. 7.3.11.2 Automatic Asynchronous Rectification Mode (AAR Mode)
      12. 7.3.12 Cycle-by-Cycle Current Limit
        1. 7.3.12.1 Cycle by Cycle Current Limit with 100% Duty Cycle Input
      13. 7.3.13 Hall Comparators (Analog Hall Inputs)
      14. 7.3.14 Advance Angle
      15. 7.3.15 FGOUT Signal
      16. 7.3.16 Protections
        1. 7.3.16.1 VM Supply Undervoltage Lockout (RESET)
        2. 7.3.16.2 AVDD Undervoltage Protection (AVDD_UV)
        3. 7.3.16.3 GVDD Undervoltage Lockout (GVDD_UV)
        4. 7.3.16.4 VCP Charge Pump Undervoltage Lockout (CPUV)
        5. 7.3.16.5 Overvoltage Protections (OV)
        6. 7.3.16.6 Overcurrent Protection (OCP)
          1. 7.3.16.6.1 OCP Latched Shutdown (OCP_MODE = 00b)
          2. 7.3.16.6.2 OCP Automatic Retry (OCP_MODE = 01b)
          3. 7.3.16.6.3 OCP Report Only (OCP_MODE = 10b)
          4. 7.3.16.6.4 OCP Disabled (OCP_MODE = 11b)
        7. 7.3.16.7 Motor Lock (MTR_LOCK)
          1. 7.3.16.7.1 MTR_LOCK Latched Shutdown (MTR_LOCK_MODE = 00b)
          2. 7.3.16.7.2 MTR_LOCK Automatic Retry (MTR_LOCK_MODE = 01b)
          3. 7.3.16.7.3 MTR_LOCK Report Only (MTR_LOCK_MODE= 10b)
          4. 7.3.16.7.4 MTR_LOCK Disabled (MTR_LOCK_MODE = 11b)
        8. 7.3.16.8 Thermal Warning (OTW)
        9. 7.3.16.9 Thermal Shutdown (OTS)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
        3. 7.4.1.3 Fault Reset (CLR_FLT or nSLEEP Reset Pulse)
      2. 7.4.2 DRVOFF Functionality
    5. 7.5 SPI Communication
      1. 7.5.1 Programming
        1. 7.5.1.1 SPI Format
  9. 8 Register Map
    1. 8.1 STATUS Registers
    2. 8.2 CONTROL Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Hall Sensor Configuration and Connection
      1. 9.2.1 Typical Configuration
      2. 9.2.2 Open Drain Configuration
      3. 9.2.3 Series Configuration
      4. 9.2.4 Parallel Configuration
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Bulk Capacitance
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
      3. 9.4.3 Thermal Considerations
        1. 9.4.3.1 Power Dissipation
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

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7.3.10 Current Sense Amplifier Output (SO)

The SO pin on the MCT8376Z-Q1 outputs an analog voltage proportional to current flowing in the low side FETs multiplied by the gain setting (GCSA). The gain setting is adjustable between four different levels which can be set by the GAIN pin (in hardware device variant) or the GAIN bits (in SPI device variant).

Figure 7-22 shows the internal architecture of the current sense amplifiers. The current sense is implemented with the sense FET on each low-side FET of the MCT8376Z-Q1 device. This current information is fed to the internal I/V converter, which generates the CSA output voltage on the SO pin based on the AVDD voltage and the Gain setting. The CSA output voltage can be calculated as :

Equation 4. VSO=VAVDD2+IOUTA+IOUTB+IOUTC×GAIN/3
MCT8376Z-Q1 Integrated Current Sense AmplifierFigure 7-22 Integrated Current Sense Amplifier

The GAIN of the CSA can be adjusted by the GAIN_SLEW_tLOCK pin as per Table 7-6 in hardware device variant or by using the SLEW bits in SPI device variant. Each half-bridge can be selected to either of a slew rate setting of 1V/ns, 0.5V/ns, 0.25V/ns or 0.05V/ns in SPI device. Each half-bridge can be selected to either of a slew rate setting of 1.1V/ns or 0.25V/ns in hardware device. The slew rate is calculated by the rise time and fall time of the voltage on OUTx pin as shown in Figure 7-13.

Table 7-5 CSA GAIN, SLEW RATE, and LOCK DETCETION TIME setting in MCT8376ZH-Q1

Configuration

GAIN_SLEW_tLOCK

Pin (Hardware Variant)		GAINSLEWLOCK_DET_TIME
1Connected to AGND0.4V/A1.1V/ns500ms
2Connected to AGND with RMODE10.4V/A1.1V/ns5000ms
3Connected to AGND with RMODE20.4V/A0.25V/ns500ms
4Hi-Z0.4V/A0.25V/ns5000ms
5Connected to GVDD with RMODE22.5V/A1.1V/ns500ms
6Connected to GVDD with RMODE12.5V/A1.1V/ns5000ms
7Connected to GVDD2.5V/A0.25V/ns500ms
Note: The current sense amplifier supports only a low capacitive load at the output. TI recommends connecting the low pass filter with the resistor and capacitor on output of the current sense amplifier.
Note: The current sense amplifier supports dynamic gain change. The current sense amplifier supports dynamic gain change. The GAIN is sampled every 1ms through pin sensing in the HW variant and any GAIN change through SPI write (in the SPI variant). After receiving the GAIN change command, the new GAIN will be applied on the next rising edge of any PWM signal.