ZHCSN08C August   2020  – August 2022 DRV8714-Q1 , DRV8718-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1. 6.1 VQFN (RVJ) 56-Pin Package and Pin Functions
    2. 6.2 VQFN (RHA) 40-Pin Package and Pin Functions
    3. 6.3 HTQFP (PHP) 48-Pin Package and Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 External Components
      2. 8.3.2 Device Interface Variants
        1. 8.3.2.1 Serial Peripheral Interface (SPI)
        2. 8.3.2.2 Hardware (H/W)
      3. 8.3.3 Input PWM Control Modes
        1. 8.3.3.1 Half-Bridge Control Scheme With Input PWM Mapping
          1. 8.3.3.1.1 DRV8718-Q1 Half-Bridge Control
          2. 8.3.3.1.2 DRV8714-Q1 Half-Bridge Control
        2. 8.3.3.2 H-Bridge Control
          1. 8.3.3.2.1 DRV8714-Q1 H-Bridge Control
        3. 8.3.3.3 Split HS and LS Solenoid Control
          1. 8.3.3.3.1 DRV8714-Q1 Split HS and LS Solenoid Control
      4. 8.3.4 Smart Gate Driver
        1. 8.3.4.1 Functional Block Diagram
        2. 8.3.4.2 Slew Rate Control (IDRIVE)
        3. 8.3.4.3 Gate Drive State Machine (TDRIVE)
        4. 8.3.4.4 Propagation Delay Reduction (PDR)
          1. 8.3.4.4.1 PDR Pre-Charge/Pre-Discharge Control Loop Operation Details
            1. 8.3.4.4.1.1 PDR Pre-Charge/Pre-Discharge Setup
          2. 8.3.4.4.2 PDR Post-Charge/Post-Discharge Control Loop Operation Details
            1. 8.3.4.4.2.1 PDR Post-Charge/Post-Discharge Setup
          3. 8.3.4.4.3 Detecting Drive and Freewheel MOSFET
        5. 8.3.4.5 Automatic Duty Cycle Compensation (DCC)
        6. 8.3.4.6 Closed Loop Slew Time Control (STC)
          1. 8.3.4.6.1 STC Control Loop Setup
      5. 8.3.5 Tripler (Dual-Stage) Charge Pump
      6. 8.3.6 Wide Common-Mode Current Shunt Amplifiers
      7. 8.3.7 Pin Diagrams
        1. 8.3.7.1 Logic Level Input Pin (INx/ENx, INx/PHx, nSLEEP, nSCS, SCLK, SDI)
        2. 8.3.7.2 Logic Level Push Pull Output (SDO)
        3. 8.3.7.3 Logic Level Multi-Function Pin (DRVOFF/nFLT)
        4. 8.3.7.4 Quad-Level Input (GAIN, MODE)
        5. 8.3.7.5 Six-Level Input (IDRIVE, VDS)
      8. 8.3.8 Protection and Diagnostics
        1. 8.3.8.1  Gate Driver Disable (DRVOFF/nFLT and EN_DRV)
        2. 8.3.8.2  Low IQ Powered Off Braking (POB, BRAKE)
        3. 8.3.8.3  Fault Reset (CLR_FLT)
        4. 8.3.8.4  DVDD Logic Supply Power on Reset (DVDD_POR)
        5. 8.3.8.5  PVDD Supply Undervoltage Monitor (PVDD_UV)
        6. 8.3.8.6  PVDD Supply Overvoltage Monitor (PVDD_OV)
        7. 8.3.8.7  VCP Charge Pump Undervoltage Lockout (VCP_UV)
        8. 8.3.8.8  MOSFET VDS Overcurrent Protection (VDS_OCP)
        9. 8.3.8.9  Gate Driver Fault (VGS_GDF)
        10. 8.3.8.10 Thermal Warning (OTW)
        11. 8.3.8.11 Thermal Shutdown (OTSD)
        12. 8.3.8.12 Offline Short Circuit and Open Load Detection (OOL and OSC)
        13. 8.3.8.13 Watchdog Timer
        14. 8.3.8.14 Fault Detection and Response Summary Table
    4. 8.4 Device Functional Modes
      1. 8.4.1 Inactive or Sleep State
      2. 8.4.2 Standby State
      3. 8.4.3 Operating State
    5. 8.5 Programming
      1. 8.5.1 SPI Interface
      2. 8.5.2 SPI Format
      3. 8.5.3 SPI Interface for Multiple Slaves
        1. 8.5.3.1 SPI Interface for Multiple Slaves in Daisy Chain
    6. 8.6 Register Maps
      1. 8.6.1 DRV8718-Q1 Register Map
      2. 8.6.2 DRV8714-Q1 Register Map
      3. 8.6.3 DRV8718-Q1 Register Descriptions
        1. 8.6.3.1 DRV8718-Q1_STATUS Registers
        2. 8.6.3.2 DRV8718-Q1_CONTROL Registers
        3. 8.6.3.3 DRV8718-Q1_CONTROL_ADV Registers
        4. 8.6.3.4 DRV8718-Q1_STATUS_ADV Registers
      4. 8.6.4 DRV8714-Q1 Register Descriptions
        1. 8.6.4.1 DRV8714-Q1_STATUS Registers
        2. 8.6.4.2 DRV8714-Q1_CONTROL Registers
        3. 8.6.4.3 DRV8714-Q1_CONTROL_ADV Registers
        4. 8.6.4.4 DRV8714-Q1_STATUS_ADV Registers
  9. 9  Application Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Gate Driver Configuration
          1. 9.2.2.1.1 VCP Load Calculation Example
          2. 9.2.2.1.2 IDRIVE Calculation Example
          3. 9.2.2.1.3 tDRIVE Calculation Example
          4. 9.2.2.1.4 Maximum PWM Switching Frequency
        2. 9.2.2.2 Current Shunt Amplifier Configuration
        3. 9.2.2.3 Power Dissipation
      3. 9.2.3 Application Curves
    3. 9.3 Initialization
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device Documentation and Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documents
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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8.3.5 Tripler (Dual-Stage) Charge Pump

The high-side gate drive voltage for the external MOSFET is generated using a tripler (dual-stage) charge pump that operates from the PVDD voltage supply input. The charge pump allows the high-side and low-side gate drivers to properly bias the external N-channel MOSFETs with respect to its source voltage across a wide input supply voltage range. The charge pump output is regulated (VVCP) to maintain a fixed voltage respect to VPVDD. The charge pump is continuously monitored for an undervoltage (VCP_UV) event to prevent under driven MOSFET conditions or in case of a short circuit condition.

The charge pump provides several configuration options. By default the charge pump will automatically switch between tripler (dual-stage) mode and doubler (single-stage) mode after the PVDD pin voltage crosses the VCP_SO threshold in order to reduce power dissipation. On SPI device variants, the charge pump can also be configured to always remain in tripler or doubler mode through the SPI register setting CP_MODE.

The charge pumps requires a low ESR, 1-µF, 16-V ceramic capacitor (X5R or X7R recommended) between the PVDD and VCP pins to act as the storage capacitor. Additionally, a low ESR, 100-nF, PVDD-rated ceramic capacitor (X5R or X7R recommended) is required between the CP1H to CP1L and CP2H to CP2L pins to act as the flying capacitors.

Note:

Since the charge pump is regulated to the PVDD pin, it should be ensured that the voltage difference between the PVDD pin and MOSFET power supply is limited to a threshold that allows for proper VGS of the external MOSFET during switching operation.