ZHCSDG6C March   2015  – January 2023 DRV2700

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Boost Converter and Control Loop
      2. 7.3.2 High-Voltage Amplifier
      3. 7.3.3 Fast Start-Up (Enable Pin)
      4. 7.3.4 Gain Control
      5. 7.3.5 Adjustable Boost Voltage
      6. 7.3.6 Adjustable Boost Current-Limit
      7. 7.3.7 Internal Charge Pump
      8. 7.3.8 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Boost + Amplifier Mode
      2. 7.4.2 Flyback Mode
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 AC-Coupled DAC Input Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Piezo Load Selection
          2. 8.2.1.2.2  Programming The Boost Voltage
          3. 8.2.1.2.3  Inductor and Transformer Selection
          4. 8.2.1.2.4  Programing the Boost and Flyback Current-Limit
          5. 8.2.1.2.5  Boost Capacitor Selection
          6. 8.2.1.2.6  Pulldown FET and Resistors
          7. 8.2.1.2.7  Low-Voltage Operation
          8. 8.2.1.2.8  Current Consumption Calculation
          9. 8.2.1.2.9  Input Filter Considerations
          10. 8.2.1.2.10 Output Limiting Factors
          11. 8.2.1.2.11 Startup and Shutdown Sequencing
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Filtered AC Coupled Single-Ended PWM Input Application
      3. 8.2.3 DC-Coupled DAC Input Application
      4. 8.2.4 DC-Coupled Reference Input Application
      5. 8.2.5 Flyback Circuit
    3. 8.3 System Example
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Boost + Amplifier Configuration Layout Considerations
      2. 10.1.2 Flyback Configuration Layout Considerations
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Trademarks
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGP|20
散热焊盘机械数据 (封装 | 引脚)
订购信息
Pulldown FET and Resistors

The pulldown FET and resistor are used to help speed up the drain the charge on the high-voltage output. Because the FET must be driven from a comparator, an NMOS FET must be used. During normal operation, the VDS of the NMOS is subject to a any value from approximately 0 V when the FET is on, to the output on the flyback configuration (V(HV)) when the FET is off. Therefore, selecting a FET with a VDS breakdown higher than the maximum VHV is required. Additionally, placing a resistor in series with this FET (on the drain side) to limit the current going through the FET is required. This resistor can be sized according to the maximum current allowed per the data sheet of the FET. As an additional measure, a resistor can be placed on the source side to protect the pulldown FET, such that when current flows through the resistor, it raises the source voltage and thereby lowers the VGS and shuts the FET off.

Because this design example is using the boost + amplifier configuration, the pulldown FET and resistors are not required.