LMG3522R030

활성

통합 드라이버, 보호 및 온도 보고 기능이 있는 650V 30mΩ GaN FET

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데이터 시트

document-pdfAcrobat LMG352xR030 650 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. B) (영어) PDF | HTML

LMG3522R030

활성

데이터 시트

지금 주문하기

제품 상세 정보

VDS (max) (V)

650

RDS(on) (mΩ)

30

ID (max) (A)

55

Features

Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled

Rating

Catalog

Operating temperature range (°C)

-40 to 150

VDS (max) (V)

650

RDS(on) (mΩ)

30

ID (max) (A)

55

Features

Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled

Rating

Catalog

Operating temperature range (°C)

-40 to 150

VQFN (RQS)

52

144 mm² (12 mm × 12 mm)

650V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
Advanced power management
- Digital temperature PWM output
- LMG3526R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
- LMG3527R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance

650V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
Advanced power management
- Digital temperature PWM output
- LMG3526R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
- LMG3527R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance

The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3527R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3527R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

filter

기타 질화 갈륨(GaN) 전력계 찾기

다운로드 스크립트와 함께 비디오 보기 비디오

관심 가지실만한 유사 제품

open-in-new

대안 비교

비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀.

LMG3422R030

활성

통합 드라이버, 보호 및 온도 보고 기능이 있는 600V 30mΩ GaN FET Industrial version with bottom-side cooling

LMG3526R030

활성

일체형 드라이버, 보호 및 제로 전압 감지 기능이 있는 650V 30mΩ GaN FET Zero-voltage switching detection feature

LMG3522R030-Q1

활성

통합 드라이버, 보호 및 온도 보고 기능이 있는 오토모티브 650V 30mΩ GaN FET Automotive grade version of the same device

기술 자료

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7개 모두 보기

상위 문서	유형	직함	형식 옵션	최신 영어 버전 다운로드	날짜
*	데이터 시트	LMG352xR030 650 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. B)	PDF \| HTML		2025. 1. 23
	Product overview	HVDC QFN-Packaged GaN Power Devices	PDF \| HTML		2026. 3. 31
	애플리케이션 노트	Design Consideration of 3-Level Flying Capacitor Converters for Three-Phase AC/DC Applications	PDF \| HTML		2026. 1. 12
	애플리케이션 노트	Implementation of Single-Phase Off-Grid Inverter With Digital Control Using PLECS Simulation	PDF \| HTML		2024. 4. 15
	기술 문서	높은 회전율로 부하 과도 테스트	PDF \| HTML	Download English Version	2024. 3. 20
	아날로그 디자인 학술지	고밀도 GaN 최적화 PFC 컨버터에서 AC 드롭아웃 복구 문제 해결	PDF \| HTML	Download English Version	2024. 3. 18
	기술 문서	The benefits of GaN for battery test systems	PDF \| HTML		2022. 10. 7

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

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이 평가 마더보드는 M-CRPS 서버 전원 공급 장치를 대상으로 하는 질화 갈륨(GaN) 기반, 3kW, 단상 CCM(연속 전도 모드) 토템 폴 브리지리스 PFC(역률 보정) 컨버터입니다. 이 설계에는 AMCx306을 전류 감지 장치로 사용하여 0.5% 정확도의 전기 계량기 기능이 포함되어 있어 외부 전력 계량 IC가 필요 없습니다. 이 설계에는 TMCS1133을 사용하는 비용에 최적화된 대체 전류 감지 옵션도 제공됩니다. 이 공급 장치는 16A_RMS의 최대 입력 전류와 3.6kW의 피크 전력을 지원하도록 설계되었습니다. 전력계 (...)

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