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UCC21755-Q1

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具有主动保护和隔离式感应功能的汽车级 ±10A 隔离式单通道栅极驱动器

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UCC21755-Q1

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产品详情

Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Desaturation (DESAT) protection, Disable, Enable, Fault reporting, High CMTI, Integrated analog to PWM sensor, Power good, Soft turn-off, Split output Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Desaturation (DESAT) protection, Disable, Enable, Fault reporting, High CMTI, Integrated analog to PWM sensor, Power good, Soft turn-off, Split output Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm)
  • 5.7kVRMS single-channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 200ns response time fast DESAT protection with 5V threshold
  • 4A internal active Miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC, or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over- or under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • 5.7kVRMS single-channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 200ns response time fast DESAT protection with 5V threshold
  • 4A internal active Miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC, or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over- or under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
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UCC21756-Q1 正在供货 具有主动保护和隔离式感应功能的汽车类 ±10A 隔离式单通道栅极驱动器 5-V DESAT version enables faster short-circuit protection for SiC FETs, which is critical to prevent SiC FET destruction

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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 UCC21755-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI 数据表 (Rev. A) PDF | HTML 2024-6-17
应用手册 为 IGBT 和 SiC 电源模块选择适当的保护方法 PDF | HTML 英语版 PDF | HTML 2025-1-8
应用简报 我的设计是否需要米勒钳位？ PDF | HTML 英语版 PDF | HTML 2025-1-6
应用手册 驱动芯片退饱和保护（DESAT）应用指导 2024-1-3
证书 UCC217xx/-Q1 CQC Certificate of Product Certification 2023-6-7

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评估板

UCC21750QDWEVM-025 — 适用于 SiC 和 IGBT 晶体管和电源模块的驱动和保护评估板

UCC21750QDWEVM-025 是一个紧凑的单通道隔离式栅极驱动器板，可提供采用 150mm x 62mm x 17mm 和 106mm x 62mm x 30mm 封装的 SiC MOSFET 和 Si IGBT 电源模块所需的驱动电压、偏置电压，以及基于去饱和功能的保护和诊断。此 TI EVM 以 5.7kVrms 增强型隔离驱动器 UCC21750 为基础，后者采用 SOIC-16DW 封装，具有 8.0mm 爬电距离和间隙。该 EVM 包含基于 SN6505B 的隔离式直流/直流变压器偏置电源。
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