产品详细信息

Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 10 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8000 DIN V VDE V 0884-10 working voltage (Vpk) 2121 Output VCC/VDD (Max) (V) 33 Output VCC/VDD (Min) (V) 13 Input VCC (Min) (V) 3 Input VCC (Max) (V) 5.5 Prop delay (ns) 90 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12
Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 10 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8000 DIN V VDE V 0884-10 working voltage (Vpk) 2121 Output VCC/VDD (Max) (V) 33 Output VCC/VDD (Min) (V) 13 Input VCC (Min) (V) 3 Input VCC (Max) (V) 5.5 Prop delay (ns) 90 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12
SOIC (DW) 16 77 mm² 10.3 x 7.5
  • 5.7-kVRMS single-channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 0: -40°C to +150°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121 Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection with 5-V threshold
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC, or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over- or under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • 5.7-kVRMS single-channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 0: -40°C to +150°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121 Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection with 5-V threshold
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC, or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over- or under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew , and >150-V/ns common mode noise immunity (CMTI).

The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew , and >150-V/ns common mode noise immunity (CMTI).

The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

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UCC21750QDWEVM-025 — 适用于 SiC 和 IGBT 晶体管及电源模块的驱动和保护评估板

The UCC21750QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, desat feature based protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms (...)
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