封装信息
| 封装 | 引脚 WSON (DEE) | 6 |
| 工作温度范围 (°C) -40 to 125 |
| 包装数量 | 包装 3,000 | LARGE T&R |
LMG1025-Q1 的特性
- AEC-Q100 grade 1 qualified
- 1.25-ns typical minimum input pulse width
- 2.6-ns typical rising propagation delay
- 2.9-ns typical falling propagation delay
- 300-ps typical pulse distortion
- Independent 7-A pull-up and 5-A pull-down current
- 650-ps typical rise time (220-pF load)
- 850-ps typical fall time (220-pF load)
- 2-mm x 2-mm QFN package
- Inverting and non-inverting inputs
- UVLO and over-temperature protection
- Single 5-V supply voltage
LMG1025-Q1 的说明
The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25-ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300-ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9-ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.
The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.