TIDT228 October   2022

 

  1.   Description
  2.   Features
  3.   Applications
  4. 1Specifications
    1. 1.1 Voltage and Current Requirements
    2. 1.2 Dimensions
  5. 2Testing and Results
    1. 2.1 Standby Power Consumption
    2. 2.2 Efficiency Graphs
    3. 2.3 Thermal Images
    4. 2.4 Bode Plots
    5. 2.5 Conducted EMI
  6. 3Waveforms
    1. 3.1 Switching
    2. 3.2 Output Voltage Ripple
    3. 3.3 Load Transients
    4. 3.4 Start-Up

Switching

Switching behavior at 132 VAC, 60-Hz input is shown in the following figures. The highest voltage stress on both primary and secondary FETs occurs at highest input voltage and highest output voltage conditions. The voltage stress is highest on the primary FET during Low Power Mode operation of the UCC28782. At this condition, the high-side FET is disabled to conserve power dissipation, resulting in a leakage spike on the primary FET.

GUID-20220815-SS0I-VFCJ-L7KB-1XBPTXVXBZBN-low.pngFigure 3-1 Primary FET (U2) Drain-Source Voltage at 20-V Output and 3-A Load
GUID-20220815-SS0I-H8QV-F25X-VVLD0SX82793-low.pngFigure 3-3 Secondary FET (Q1) Drain-Source Voltage at 20-V Output and 3-A Load
GUID-20220815-SS0I-GX2T-7QBG-GLVCHGVCCNPN-low.pngFigure 3-2 Primary FET (U2) Drain-Source Voltage at 20-V Output and 250-mA Load
GUID-20220815-SS0I-NNDS-2PC2-F50FBSHM8GX9-low.pngFigure 3-4 Secondary FET (Q1) Drain-Source Voltage at 20-V Output and 250-mA Load