SLVAEF4C august   2019  – may 2023 TPS7H4001-SP

PRODUCTION DATA  

  1.   1
  2.   Single-Event Effects Test Report of the TPS7H4001-SP
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Events Effects (SEE)
  6. 3 Test Device and Evaluation Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Safe-Operating-Area (SOA) Results
    2. 7.2 Single Event Latch-Up (SEL) Results
    3. 7.3 Single-Event-Burnout (SEB) and Single-Event-Gate-Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Summary
  13. 10Total Ionizing Dose (TID) From SEE Experiments
  14. 11References
  15. 12Revision History

Abstract

The purpose of this study was to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the TPS7H4001-SP. Heavy-ions with effective linear energy transferred (LETEFF) of 49 to 75 MeV·cm2/mg were used to irradiate 37 RHA devices in 92 experiments. Flux of ≈105 ions/cm2·s and fluences of 8.1 × 105 to 2 × 107 ions/cm2 per run were used. The devices were characterized over a variety of input voltages, loads, and LETEFF. The results demonstrate that, when operated within its safe-operating-area (SOA), the TPS7H4001-SP is DSEE-free. SET characterization for VOUT transients ≥ |3%| from the nominal output voltage (≈1 – V) and PWRGD are presented and discussed in this report. This report uses the QMLV TPS7H4001-SP device in a ceramic package. It is also applicable for the QMLP TPS7H4001-SP device in a plastic package which uses the same die as the QMLV device.