SLVAEF4C august   2019  – may 2023 TPS7H4001-SP

PRODUCTION DATA  

  1.   1
  2.   Single-Event Effects Test Report of the TPS7H4001-SP
  3.   Trademarks
  4. Introduction
  5. Single-Events Effects (SEE)
  6. Test Device and Evaluation Board Information
  7. Irradiation Facility and Setup
  8. Depth, Range, and LETEFF Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Safe-Operating-Area (SOA) Results
    2. 7.2 Single Event Latch-Up (SEL) Results
    3. 7.3 Single-Event-Burnout (SEB) and Single-Event-Gate-Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Summary
  13. 10Total Ionizing Dose (TID) From SEE Experiments
  14. 11References
  15. 12Revision History

References

  1. M. Shoga and D. Binder, “Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits”, IEEE Trans. Nucl. Sci, Vol. 33(6), Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J.M. Palau, “Single particle-induced latchup”, IEEE Trans. Nucl. Sci, Vol. 43(2), Mar. 1996, pp. 522-532.
  3. G. H. Johnson, J. H. Hohl, R. D. Schrimpf and K. F. Galloway, "Simulating single-event burnout of n-channel power MOSFET's," in IEEE Transactions on Electron Devices, vol. 40, no. 5, pp. 1001-1008, May 1993.
  4. G. H. Johnson, R. D. Schrimpf, K. F. Galloway, and R. Koga,“Temperature dependence of single event burnout in n-channel power MOSFETs [for space application],” IEEE Trans. Nucl. Sci., 39(6), Dec. 1992, pp. 1605-1612.
  5. J. R. Brews, M. Allenspach, R. D. Schrimpf, K. F. Galloway,J. L. Titus and C. F. Wheatley, "A conceptual model of a single-event gate-rupture in power MOSFETs," in IEEE Transactions on Nuclear Science, vol. 40, no. 6, pp. 1959-1966, Dec. 1993.
  6. TAMU Radiation Effects Facility
  7. “The Stopping and Range of Ions in Matter” (SRIM) software simulation tools website. http://www.srim.org/index.htm#SRIMMENU
  8. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol.1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.