SLVAEF4C august   2019  – may 2023 TPS7H4001-SP

PRODUCTION DATA  

  1.   1
  2.   Single-Event Effects Test Report of the TPS7H4001-SP
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Events Effects (SEE)
  6. 3 Test Device and Evaluation Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Safe-Operating-Area (SOA) Results
    2. 7.2 Single Event Latch-Up (SEL) Results
    3. 7.3 Single-Event-Burnout (SEB) and Single-Event-Gate-Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Summary
  13. 10Total Ionizing Dose (TID) From SEE Experiments
  14. 11References
  15. 12Revision History

References

  1. M. Shoga and D. Binder, “Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits”, IEEE Trans. Nucl. Sci, Vol. 33(6), Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J.M. Palau, “Single particle-induced latchup”, IEEE Trans. Nucl. Sci, Vol. 43(2), Mar. 1996, pp. 522-532.
  3. G. H. Johnson, J. H. Hohl, R. D. Schrimpf and K. F. Galloway, "Simulating single-event burnout of n-channel power MOSFET's," in IEEE Transactions on Electron Devices, vol. 40, no. 5, pp. 1001-1008, May 1993.
  4. G. H. Johnson, R. D. Schrimpf, K. F. Galloway, and R. Koga,“Temperature dependence of single event burnout in n-channel power MOSFETs [for space application],” IEEE Trans. Nucl. Sci., 39(6), Dec. 1992, pp. 1605-1612.
  5. J. R. Brews, M. Allenspach, R. D. Schrimpf, K. F. Galloway,J. L. Titus and C. F. Wheatley, "A conceptual model of a single-event gate-rupture in power MOSFETs," in IEEE Transactions on Nuclear Science, vol. 40, no. 6, pp. 1959-1966, Dec. 1993.
  6. TAMU Radiation Effects Facility
  7. “The Stopping and Range of Ions in Matter” (SRIM) software simulation tools website. http://www.srim.org/index.htm#SRIMMENU
  8. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol.1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.