ZHCSL06D February   2008  – February 2020 TPS51200

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化的 DDR 应用
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Sink and Source Regulator (VO Pin)
      2. 7.3.2  Reference Input (REFIN Pin)
      3. 7.3.3  Reference Output (REFOUT Pin)
      4. 7.3.4  Soft-Start Sequencing
      5. 7.3.5  Enable Control (EN Pin)
      6. 7.3.6  Powergood Function (PGOOD Pin)
      7. 7.3.7  Current Protection (VO Pin)
      8. 7.3.8  UVLO Protection (VIN Pin)
      9. 7.3.9  Thermal Shutdown
      10. 7.3.10 Tracking Start-up and Shutdown
      11. 7.3.11 Output Tolerance Consideration for VTT DIMM Applications
      12. 7.3.12 REFOUT (VREF) Consideration for DDR2 Applications
    4. 7.4 Device Functional Modes
      1. 7.4.1 Low Input Voltage Applications
      2. 7.4.2 S3 and Pseudo-S5 Support
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Voltage Capacitor
        2. 8.2.2.2 VLDO Input Capacitor
        3. 8.2.2.3 Output Capacitor
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
      1. 8.3.1 3.3-VIN, DDR2 Configuration
      2. 8.3.2 2.5-VIN, DDR3 Configuration
      3. 8.3.3 3.3-VIN, LP DDR3 or DDR4 Configuration
      4. 8.3.4 3.3-VIN, DDR3 Tracking Configuration
      5. 8.3.5 3.3-VIN, LDO Configuration
      6. 8.3.6 3.3-VIN, DDR3 Configuration with LFP
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Design Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
      2. 11.1.2 开发支持
        1. 11.1.2.1 评估模块
        2. 11.1.2.2 Spice 模型
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.2.3 Application Curves

Figure 25 shows the bode plot simulation for this DDR3 design example of the TPS51200 device.

The unity-gain bandwidth is approximately 1 MHz and the phase margin is 52°. The 0-dB level is crossed, the gain peaks because of the ESL effect. However, the peaking maintains a level well below 0 dB.

Figure 26 shows the load regulation and Figure 27 shows the transient response for a typical DDR3 configuration. When the regulator is subjected to ±1.5-A load step and release, the output voltage measurement shows no difference between the dc and ac conditions.

TPS51200 bode_plot_ddr3_wide_sluse812.gif
VIN = 3.3 V VVLDOIN = 1.5 V VVO = 0.75 V
IIO = 2 A 3 × 10-μF capacitors ESR = 2.5 mΩ
ESL = 800 pH
Figure 25. DDR3 Design Example Bode Plot
TPS51200 load_reg_ddr3_33_slus812.gif
VVIN = 3.3 V DDR3
Figure 26. Load Regulation
TPS51200 transient_wave_slus812.pngFigure 27. Transient Waveform