ZHCSI22F October   2017  – December 2021 TPS2662

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Undervoltage Lockout (UVLO)
      2. 9.3.2 Overvoltage Protection (OVP)
      3. 9.3.3 Hot Plug-In and Inrush Current Control
      4. 9.3.4 Reverse Polarity Protection
        1. 9.3.4.1 Input Side Reverse Polarity Protection
        2. 9.3.4.2 Output Side Reverse Polarity Protection
      5. 9.3.5 Overload and Short-Circuit Protection
        1. 9.3.5.1 Overload Protection
        2.       28
        3. 9.3.5.2 Short-Circuit Protection
          1. 9.3.5.2.1 Start-Up With Short-Circuit On Output
      6. 9.3.6 Reverse Current Protection
      7. 9.3.7 FAULT Response
      8. 9.3.8 IN, OUT, RTN, and GND Pins
      9. 9.3.9 Thermal Shutdown
    4. 9.4 Device Functional Modes
      1. 9.4.1 Low Current Shutdown Control (SHDN)
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Step-by-Step Design Procedure
        2. 10.2.2.2 Programming the Current Limit Threshold R(ILIM) Selection
        3. 10.2.2.3 Undervoltage Lockout and Overvoltage Set Point
        4. 10.2.2.4 Setting Output Voltage Ramp Time—(tdVdT)
          1. 10.2.2.4.1 Case 1: Start-Up Without Load—Only Output Capacitance C(OUT) Draws Current During Start-Up
          2. 10.2.2.4.2 Case 2: Start-Up With Load —Output Capacitance C(OUT) and Load Draws Current During Start-Up
          3. 10.2.2.4.3 Support Component Selections – R FLT and C(IN)
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 Field Supply Protection in PLC, DCS I/O Modules
      2. 10.3.2 Simple 24-V Power Supply Path Protection
      3. 10.3.3 Power Stealing in Smart Thermostat
    4. 10.4 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Transient Protection
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

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9.3.5.2 Short-Circuit Protection

During a transient output short circuit event, the current through the device increases rapidly. As the current-limit amplifier cannot respond quickly to this event due to its limited bandwidth, the device incorporates a fast-trip comparator. The fast-trip comparator architecture is designed for fast turn OFF (tFAST-TRIP(dly) = 220 ns (typical)) of the internal FET during an output short circuit event. The fast-trip threshold is internally set to I(FAST-TRIP). The fast-trip circuit holds the internal FET off for only a few microseconds, after which the device turns back on slowly, allowing the current-limit loop to regulate the output current to I(OL). Then the device functions similar to the overload condition. Figure 9-10 and Figure 9-11 illustrate the behavior of the system during output short-circuit condition.

GUID-9FF815CD-A9EB-4801-8B20-18426822D810-low.png
VIN = 24 V, RILIM = 7.5 kΩ
Figure 9-10 Output Hot Short Functionality at 24-V Input
GUID-4E961024-BE1D-421D-9F51-006C197F0779-low.gifFigure 9-11 Hot-Short: Fast-Trip Response (Zoomed)

The fast-trip comparator architecture has a supply line noise immunity resulting in a robust performance in noisy environments. This feature is achieved by controlling the turn OFF time of the internal FET based on the differential voltage across V(IN) and V(OUT) after the current through the device exceeds I(FAST-TRIP). Higher the voltage difference V(IN) – V(OUT), faster the turn OFF time, tFAST-TRIP(dly).