ZHCSJ28A November   2018  – October 2022 TMUX6136

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Electrical Characteristics (Dual Supplies: ±15 V)
    6. 6.6 Switching Characteristics (Dual Supplies: ±15 V)
    7. 6.7 Electrical Characteristics (Single Supply: 12 V)
    8. 6.8 Switching Characteristics (Single Supply: 12 V)
    9.     Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
      1. 7.1.1  On-Resistance
      2. 7.1.2  Off-Leakage Current
      3. 7.1.3  On-Leakage Current
      4. 7.1.4  Transition Time
      5. 7.1.5  Break-Before-Make Delay
      6. 7.1.6  Charge Injection
      7. 7.1.7  Off Isolation
      8. 7.1.8  Channel-to-Channel Crosstalk
      9. 7.1.9  Bandwidth
      10. 7.1.10 THD + Noise
      11. 7.1.11 AC Power Supply Rejection Ratio (AC PSRR)
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Ultralow Leakage Current
      2. 7.3.2 Ultralow Charge Injection
      3. 7.3.3 Bidirectional and Rail-to-Rail Operation
    4. 7.4 Device Functional Modes
      1. 7.4.1 Truth Table
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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6.6 Switching Characteristics (Dual Supplies: ±15 V)

at TA = 25°C, VDD = 15 V, and VSS = -15 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tTRAN Transition time VS = 10 V, RL = 300 Ω , CL = 35 pF 66 78 ns
VS = 10 V, RL = 300 Ω , CL = 35 pF, TA = –40°C to +85°C 107 ns
VS = 10 V, RL = 300 Ω , CL = 35 pF, TA = –40°C to +125°C 117 ns
tBBM Break-before-make time delay VS = 10 V, RL = 300 Ω , CL = 35 pF, TA = –40°C to +125°C 20 40 ns
QJ Charge injection VS = 0 V, RS = 0 Ω , CL = 1 nF –0.4 pC
OISO Off-isolation RL = 50 Ω , CL = 5 pF, f = 1 MHz –85 dB
XTALK Channel-to-channel crosstalk RL = 50 Ω , CL = 5 pF, f = 1 MHz (Inter-channel: S1x and S2x) –105 dB
RL = 50 Ω , CL = 5 pF, f = 1 MHz (Intra-channel: SxA and SxB) –92 dB
IL Insertion loss RL = 50 Ω , CL = 5 pF, f = 1 MHz –7 dB
ACPSRR AC Power Supply Rejection Ratio RL = 10 kΩ , CL = 5 pF, VPP= 0.62 V on VDD, f= 1 MHz –59 dB
RL = 10 kΩ , CL = 5 pF, VPP= 0.62 V on VSS, f= 1 MHz –59 dB
BW -3dB Bandwidth RL = 50 Ω , CL = 5 pF 670 MHz
THD Total harmonic distortion + noise RL  =  10 kΩ , CL = 5 pF, f= 20 Hz to 20 kHz 0.08 %
CIN Digital input capacitance VIN = 0 V or VDD 1.5 pF
CS(OFF) Source off-capacitance VS = 0 V, f = 1 MHz 2.4 3.3 pF
CS(ON), CD(ON) Source and drain on-capacitance VS = 0 V, f = 1 MHz 5.5 7.5 pF