ZHCSIN7E August   2018  – December 2019 TMUX6111 , TMUX6112 , TMUX6113

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Thermal Information
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Electrical Characteristics (Dual Supplies: ±15 V)
    6. 7.6 Switching Characteristics (Dual Supplies: ±15 V)
    7. 7.7 Electrical Characteristics (Single Supply: 12 V)
    8. 7.8 Switching Characteristics (Single Supply: 12 V)
    9. 7.9 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Truth Tables
  9. 9 Detailed Description
    1. 9.1 Overview
      1. 9.1.1  On-Resistance
      2. 9.1.2  Off-Leakage Current
      3. 9.1.3  On-Leakage Current
      4. 9.1.4  Break-Before-Make Delay
      5. 9.1.5  Turn-On and Turn-Off Time
      6. 9.1.6  Charge Injection
      7. 9.1.7  Off Isolation
      8. 9.1.8  Channel-to-Channel Crosstalk
      9. 9.1.9  Bandwidth
      10. 9.1.10 THD + Noise
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Ultra-low Leakage Current
      2. 9.3.2 Ultra-low Charge Injection
      3. 9.3.3 Bidirectional and Rail-to-Rail Operation
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
    3. 10.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档
    2. 13.2 相关链接
    3. 13.3 接收文档更新通知
    4. 13.4 支持资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.3.2 Ultra-low Charge Injection

The TMUX6111, TMUX6112, and TMUX6113 are implemented with simple transmission gate topology, as shown in Figure 28. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed. The devices utilize special charge-injection cancellation circuitry that reduces the source (Sx)-to-drain (Dx) charge injection to as low as 0.6 pC at VS = 0 V, as shown in Figure 29.

TMUX6111 TMUX6112 TMUX6113 Transmission_Gate.gifFigure 28. Transmission Gate Topology
TMUX6111 TMUX6112 TMUX6113 D007_SCDS383.gifFigure 29. Source-to-Drain Charge Injection vs Source or Drain Voltage