ZHCSIN7E August   2018  – December 2019 TMUX6111 , TMUX6112 , TMUX6113

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Thermal Information
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Electrical Characteristics (Dual Supplies: ±15 V)
    6. 7.6 Switching Characteristics (Dual Supplies: ±15 V)
    7. 7.7 Electrical Characteristics (Single Supply: 12 V)
    8. 7.8 Switching Characteristics (Single Supply: 12 V)
    9. 7.9 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Truth Tables
  9. 9 Detailed Description
    1. 9.1 Overview
      1. 9.1.1  On-Resistance
      2. 9.1.2  Off-Leakage Current
      3. 9.1.3  On-Leakage Current
      4. 9.1.4  Break-Before-Make Delay
      5. 9.1.5  Turn-On and Turn-Off Time
      6. 9.1.6  Charge Injection
      7. 9.1.7  Off Isolation
      8. 9.1.8  Channel-to-Channel Crosstalk
      9. 9.1.9  Bandwidth
      10. 9.1.10 THD + Noise
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Ultra-low Leakage Current
      2. 9.3.2 Ultra-low Charge Injection
      3. 9.3.3 Bidirectional and Rail-to-Rail Operation
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
    3. 10.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档
    2. 13.2 相关链接
    3. 13.3 接收文档更新通知
    4. 13.4 支持资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.1.6 Charge Injection

The TMUX6111, TMUX6112, and TMUX6113 have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 22 shows the setup used to measure charge injection.

TMUX6111 TMUX6112 TMUX6113 QINJ.gifFigure 22. Charge-Injection Measurement Setup