ZHCSCK8G May 2014 – October 2017 LP8860-Q1
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
IL,VSENSE_P | VSENSE_P pin leakage current | VSENSE_P = 48 V | 0.1 | 3 | µA | |
IL,VSENSE_N | VSENSE_N pin leakage current | VSENSE_N = 48 V | ||||
IL,SD | SD pin leakage current | VSD = 48 V | ||||
ISD PFET | Pulldown current for power-line
p-FET, NMOS_PLFET_EN=0 |
PL_SD_SINK_LEVEL = 00
PL_SD_SINK_LEVEL = 01 PL_SD_SINK_LEVEL = 10 PL_SD_SINK_LEVEL = 11 |
55
110 220 440 |
µA |