ZHCSDE7A February   2015  – March 2021 INA225-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings (1)
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Selecting A Shunt Resistor
        1. 7.3.1.1 Selecting A Current-Sense Resistor Example
        2. 7.3.1.2 Optimizing Power Dissipation versus Measurement Accuracy
      2. 7.3.2 Programmable Gain Select
    4. 7.4 Device Functional Modes
      1. 7.4.1 Input Filtering
      2. 7.4.2 Shutting Down the Device
      3. 7.4.3 Using the Device with Common-Mode Transients Above 36 V
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Microcontroller-Configured Gain Selection
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Unidirectional Operation
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
      3. 8.2.3 Bidirectional Operation
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

At TA = +25 °C, VSENSE = VIN+ – VIN–, VS = +5 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted.
PARAMETERCONDITIONSMINTYPMAXUNIT
INPUT
VCMCommon-mode input rangeTA = –40 °C to +125 °C036V
CMRCommon-mode rejectionVIN+ = 0 V to +36 V, VSENSE = 0 mV,
TA = –40 °C to +125 °C		95105dB
VOSOffset voltage, RTI(1)VSENSE = 0 mV±75±150μV
dVOS/dTRTI vs. temperatureTA = –40 °C to +125 °C0.20.5μV/°C
PSRRPower-supply rejection ratioVSENSE = 0 mV, VREF = 2.5 V,
VS = 2.7 V to 36 V		±0.1±1μV/V
IBInput bias currentVSENSE = 0 mV557285μA
IOSInput offset currentVSENSE = 0 mV±0.5μA
VREFReference input rangeTA = –40 °C to +125 °C0VSV
OUTPUT
GGain25, 50, 100, 200V/V
EGGain errorGain = 25 V/V and 50 V/V, VOUT = 0.5 V to
VS – 0.5 V, TA = –40 °C to +125 °C		±0.05%±0.15%
Gain = 100 V/V, VOUT = 0.5 V to VS – 0.5 V,
TA = –40 °C to +125 °C		±0.1%±0.2%
Gain = 200 V/V, VOUT = 0.5 V to VS – 0.5 V,
TA = –40 °C to +125 °C		±0.1%±0.3%
Gain error vs. temperatureG = 25 V/V, 50 V/V, 100 V/V,
TA = –40 °C to +125 °C		310ppm/°C
G = 200 V/V, TA = –40 °C to +125 °C515
Nonlinearity errorVOUT = 0.5 V to VS – 0.5 V±0.01%
Maximum capacitive loadNo sustained oscillation1nF
VOLTAGE OUTPUT(2)
Swing to VS power-supply railRL = 10 kΩ to GND, TA = –40 °C to +125 °CVS – 0.05VS – 0.2V
Swing to GND(3)VREF = VS / 2, all gains, RL = 10 kΩ to GND,
TA = –40 °C to +125 °C		VGND + 5VGND + 10mV
VREF = GND, gain = 25 V/V, RL = 10 kΩ to GND,
TA = –40 °C to +125 °C		VGND + 7mV
VREF = GND, gain = 50 V/V, RL = 10 kΩ to GND,
TA = –40 °C to +125 °C		VGND + 15mV
VREF = GND, gain = 100 V/V, RL = 10 kΩ to GND,
TA = –40 °C to +125 °C		VGND + 30mV
VREF = GND, gain = 200 V/V, RL = 10 kΩ to GND,
TA = –40 °C to +125 °C		VGND + 60mV
FREQUENCY RESPONSE
BWBandwidthGain = 25 V/V, CLOAD = 10 pF250kHz
Gain = 50 V/V, CLOAD = 10 pF200kHz
Gain = 100 V/V, CLOAD = 10 pF125kHz
Gain = 200 V/V, CLOAD = 10 pF70kHz
SRSlew rate0.4V/μs
NOISE, RTI(1)
Voltage noise density50nV/√ Hz
DIGITAL INPUT
CiInput capacitance3pF
Leakage input current0 ≤ VIN ≤ VS12μA
VILLow-level input logic level00.6V
VIHHigh-level input logic level2VSV
POWER SUPPLY
VSOperating voltage rangeTA = –40 °C to +125 °C+2.7+36V
IQQuiescent currentVSENSE = 0 mV300350μA
IQ over temperatureTA = –40 °C to +125 °C375μA
TEMPERATURE RANGE
Specified range–40+125°C
Operating range–55+150°C
(1) RTI = referred-to-input.
(2) See Typical Characteristic curve, Output Voltage Swing vs. Output Current (Figure 6-10).
(3) See Typical Characteristic curve, Unidirectional Output Voltage Swing vs. Temperature (Figure 6-14).