ZHCSRR7 February   2023 DRV8316C-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings Auto
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Requirements
    7. 7.7 SPI Slave Mode Timings
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Output Stage
      2. 8.3.2  Control Modes
        1. 8.3.2.1 6x PWM Mode (PWM_MODE = 00b or MODE Pin Tied to AGND)
        2. 8.3.2.2 3x PWM Mode (PWM_MODE = 10b or MODE Pin is Connected to AVDD with RMODE)
        3. 8.3.2.3 Current Limit Mode (PWM_MODE = 01b / 11b or MODE Pin is Hi-Z or Connected to AVDD)
      3. 8.3.3  Device Interface Modes
        1. 8.3.3.1 Serial Peripheral Interface (SPI)
        2. 8.3.3.2 Hardware Interface
      4. 8.3.4  Step-Down Mixed-Mode Buck Regulator
        1. 8.3.4.1 Buck in Inductor Mode
        2. 8.3.4.2 Buck in Resistor mode
        3. 8.3.4.3 Buck Regulator with External LDO
        4. 8.3.4.4 AVDD Power Sequencing on Buck Regulator
        5. 8.3.4.5 Mixed mode Buck Operation and Control
      5. 8.3.5  AVDD Linear Voltage Regulator
      6. 8.3.6  Charge Pump
      7. 8.3.7  Slew Rate Control
      8. 8.3.8  Cross Conduction (Dead Time)
      9. 8.3.9  Propagation Delay
        1. 8.3.9.1 Driver Delay Compensation
      10. 8.3.10 Pin Diagrams
        1. 8.3.10.1 Logic Level Input Pin (Internal Pulldown)
        2. 8.3.10.2 Logic Level Input Pin (Internal Pullup)
        3. 8.3.10.3 Open Drain Pin
        4. 8.3.10.4 Push Pull Pin
        5. 8.3.10.5 Four Level Input Pin
      11. 8.3.11 Current Sense Amplifiers
        1. 8.3.11.1 Current Sense Amplifier Operation
      12. 8.3.12 Active Demagnetization
        1. 8.3.12.1 Automatic Synchronous Rectification Mode (ASR Mode)
          1. 8.3.12.1.1 Automatic Synchronous Rectification in Commutation
          2. 8.3.12.1.2 Automatic Synchronous Rectification in PWM Mode
        2. 8.3.12.2 Automatic Asynchronous Rectification Mode (AAR Mode)
      13. 8.3.13 Cycle-by-Cycle Current Limit
        1. 8.3.13.1 Cycle by Cycle Current Limit with 100% Duty Cycle Input
      14. 8.3.14 Protections
        1. 8.3.14.1 VM Supply Undervoltage Lockout (NPOR)
        2. 8.3.14.2 AVDD Undervoltage Lockout (AVDD_UV)
        3. 8.3.14.3 Buck Undervoltage Lockout (BUCK_UV)
        4. 8.3.14.4 VCP Charge Pump Undervoltage Lockout (CPUV)
        5. 8.3.14.5 Overvoltage Protection (OVP)
        6. 8.3.14.6 Overcurrent Protection (OCP)
          1. 8.3.14.6.1 OCP Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.14.6.2 OCP Automatic Retry (OCP_MODE = 01b)
          3. 8.3.14.6.3 OCP Report Only (OCP_MODE = 10b)
          4. 8.3.14.6.4 OCP Disabled (OCP_MODE = 11b)
        7. 8.3.14.7 Buck Overcurrent Protection
        8. 8.3.14.8 Thermal Warning (OTW)
        9. 8.3.14.9 Thermal Shutdown (OTSD)
          1. 8.3.14.9.1 OTSD FET
          2. 8.3.14.9.2 OTSD (Non-FET)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (CLR_FLT or nSLEEP Reset Pulse)
      2. 8.4.2 DRVOFF functionality
    5. 8.5 SPI Communication
      1. 8.5.1 Programming
        1. 8.5.1.1 SPI Format
    6. 8.6 Register Map
      1. 8.6.1 STATUS Registers
      2. 8.6.2 CONTROL Registers
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Three-Phase Brushless-DC Motor Control
        1. 9.2.1.1 Detailed Design Procedure
          1. 9.2.1.1.1 Motor Voltage
          2. 9.2.1.1.2 Using Active Demagnetization
          3. 9.2.1.1.3 Driver Propagation Delay and Dead Time
          4. 9.2.1.1.4 Using Delay Compensation
          5. 9.2.1.1.5 Using the Buck Regulator
          6. 9.2.1.1.6 Current Sensing and Output Filtering
        2. 9.2.1.2 Application Curves
      2. 9.2.2 Three-Phase Brushless-DC Motor Control With Current Limit
        1. 9.2.2.1 Block Diagram
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Motor Voltage
          2. 9.2.2.2.2 ILIM Implementation
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Brushed-DC and Solenoid Load
        1. 9.2.3.1 Block Diagram
        2. 9.2.3.2 Design Requirements
          1. 9.2.3.2.1 Detailed Design Procedure
      4. 9.2.4 Three Solenoid Loads
        1. 9.2.4.1 Block Diagram
        2. 9.2.4.2 Design Requirements
          1. 9.2.4.2.1 Detailed Design Procedure
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
      1. 11.3.1 Power Dissipation
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 静电放电警告
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息
Using Active Demagnetization

Active demagnetization reduces power losses in the device by turning on the MOSFETs automatically when the body diode starts conducting to reduce diode conduction losses. It is used in trapezoidal commutation when switching commutation states (turning a high-side MOSFET off and another high-side MOSFET on while keeping a low-side MOSFET on). Active demagnetization is enabled when EN_ASR and EN_AAR bits are set in the SPI variant or OCP/SR pin is set to Mode 3 or Mode 4 in the H/W variant.

When switching commutation states with active demagnetization disabled, dead time is inserted and the low-side MOSFET’s body diode conducts while turning another high-side MOSFET on to continue sourcing current through the motor. This conduction period causes higher power losses due to the forward-bias voltage of the diode and slower dissipation of current. Figure 9-2 shows the body diode conducting when switching commutation states.
GUID-20210901-SS0I-MJCQ-XK8S-29RQK1DPQD6F-low.png Figure 9-2 Active demagnetization disabled in DRV8316C-Q1
When active demagnetization is enabled, the AD_HS and AD_LS comparators detect when the sense FET voltage is higher or lower than the programmed threshold. After the dead time period, if the threshold is exceeded for a fixed amount of time, the body diode is conducting and the logic core turns the low-side FET on to provide a conduction path with smaller power losses. Once the VDS voltage is below the comparator threshold, the MOSFET turns off and current briefly conducts through the body diode until the current completely decays to zero. This is shown in Figure 9-3.
GUID-20210820-SS0I-X7G8-NH52-10DFBR8BZDV4-low.png Figure 9-3 Active demagnetization enabled in DRV8316C-Q1