ZHCSGW5B January   2017  – October 2020 CC2640R2F-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 功能方框图
  5. 5 Revision History
  6. 6 Device Comparison
    1. 6.1 Related Products
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Wettable Flanks
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Consumption Summary
    5. 8.5  General Characteristics
    6. 8.6  1-Mbps GFSK (Bluetooth low energy Technology) – RX
    7. 8.7  1-Mbps GFSK (Bluetooth low energy Technology) – TX
    8. 8.8  24-MHz Crystal Oscillator (XOSC_HF)
    9. 8.9  32.768-kHz Crystal Oscillator (XOSC_LF)
    10. 8.10 48-MHz RC Oscillator (RCOSC_HF)
    11. 8.11 32-kHz RC Oscillator (RCOSC_LF)
    12. 8.12 ADC Characteristics
    13. 8.13 Temperature Sensor
    14. 8.14 Battery Monitor
    15. 8.15 Continuous Time Comparator
    16. 8.16 Low-Power Clocked Comparator
    17. 8.17 Programmable Current Source
    18. 8.18 Synchronous Serial Interface (SSI)
    19. 8.19 DC Characteristics
    20. 8.20 Thermal Resistance Characteristics for RGZ Package
    21. 8.21 Timing Requirements
    22. 8.22 Switching Characteristics
    23. 8.23 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  Main CPU
    3. 9.3  RF Core
    4. 9.4  Sensor Controller
    5. 9.5  Memory
    6. 9.6  Debug
    7. 9.7  Power Management
    8. 9.8  Clock Systems
    9. 9.9  General Peripherals and Modules
    10. 9.10 System Architecture
  10. 10Application, Implementation, and Layout
    1. 10.1 Application Information
    2. 10.2 7 × 7 Internal Differential (7ID) Application Circuit
      1. 10.2.1 Layout
  11. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
    3. 11.3 Documentation Support
    4. 11.4 Texas Instruments Low-Power RF Website
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Export Control Notice
    9. 11.9 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply voltage, VDDS(3) VDDR supplied by internal DC/DC regulator or internal GLDO. VDDS_DCDC connected to VDDS on PCB. –0.3 4.1 V
Voltage on any digital pin(4)(5) –0.3 VDDS + 0.3, max 4.1 V
Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X24M_N and X24M_P –0.3 VDDR + 0.3, max 2.25 V
Voltage on ADC input (Vin) Voltage scaling enabled –0.3 VDDS V
Voltage scaling disabled, internal reference –0.3 1.49
Voltage scaling disabled, VDDS as reference –0.3 VDDS / 2.9
Input RF level 5 dBm
Tstg Storage temperature –40 150 °C
(1) All voltage values are with respect to ground, unless otherwise noted.
(2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(3) VDDS2 and VDDS3 need to be at the same potential as VDDS.
(4) Including analog-capable DIO.
(5) Injection current is not supported on any GPIO pin.