ZHCSGW5B January   2017  – October 2020 CC2640R2F-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 功能方框图
  5. 5 Revision History
  6. 6 Device Comparison
    1. 6.1 Related Products
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Wettable Flanks
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Consumption Summary
    5. 8.5  General Characteristics
    6. 8.6  1-Mbps GFSK (Bluetooth low energy Technology) – RX
    7. 8.7  1-Mbps GFSK (Bluetooth low energy Technology) – TX
    8. 8.8  24-MHz Crystal Oscillator (XOSC_HF)
    9. 8.9  32.768-kHz Crystal Oscillator (XOSC_LF)
    10. 8.10 48-MHz RC Oscillator (RCOSC_HF)
    11. 8.11 32-kHz RC Oscillator (RCOSC_LF)
    12. 8.12 ADC Characteristics
    13. 8.13 Temperature Sensor
    14. 8.14 Battery Monitor
    15. 8.15 Continuous Time Comparator
    16. 8.16 Low-Power Clocked Comparator
    17. 8.17 Programmable Current Source
    18. 8.18 Synchronous Serial Interface (SSI)
    19. 8.19 DC Characteristics
    20. 8.20 Thermal Resistance Characteristics for RGZ Package
    21. 8.21 Timing Requirements
    22. 8.22 Switching Characteristics
    23. 8.23 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  Main CPU
    3. 9.3  RF Core
    4. 9.4  Sensor Controller
    5. 9.5  Memory
    6. 9.6  Debug
    7. 9.7  Power Management
    8. 9.8  Clock Systems
    9. 9.9  General Peripherals and Modules
    10. 9.10 System Architecture
  10. 10Application, Implementation, and Layout
    1. 10.1 Application Information
    2. 10.2 7 × 7 Internal Differential (7ID) Application Circuit
      1. 10.2.1 Layout
  11. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
    3. 11.3 Documentation Support
    4. 11.4 Texas Instruments Low-Power RF Website
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Export Control Notice
    9. 11.9 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.20 Thermal Resistance Characteristics for RGZ Package

over operating free-air temperature range (unless otherwise noted)
NAMEDESCRIPTION(°C/W)(1)(2)
RθJAJunction-to-ambient thermal resistance29.6
RθJC(top)Junction-to-case (top) thermal resistance15.7
RθJBJunction-to-board thermal resistance6.2
PsiJTJunction-to-top characterization parameter0.3
PsiJBJunction-to-board characterization parameter6.2
RθJC(bot)Junction-to-case (bottom) thermal resistance1.9
(1) °C/W = degrees Celsius per watt.
(2) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RθJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see the following EIA/JEDEC standards:
  • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
  • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 2 W and an ambient temperature of 70°C is assumed.