ZHCSGW5B January 2017 – October 2020 CC2640R2F-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
---|---|---|---|---|---|
FLASH MEMORY | |||||
Supported flash erase cycles before failure | 100 | k Cycles | |||
Maximum number of write operations per row before erase(1) | 83 | write operations | |||
Flash retention | 105°C | 11.4 | Years at 105°C | ||
Flash page/sector erase current | Average delta current | 12.6 | mA | ||
Flash page/sector size | 4 | KB | |||
Flash page/sector erase time(2) | Zero cycles | 8 | ms | ||
Flash page/sector erase time (2) | 30 000 cycles | 4000 | ms | ||
Flash write current | Average delta current, 4 bytes at a time | 8.15 | mA | ||
Flash write time | 4 bytes at a time | 8 | µs |