ZHCSNA1A april   2020  – february 2021 BQ25968

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 说明（续）
  7. 6 Device Comparison Table
  8. 7 Pin Configuration and Functions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Charging System
      2. 9.3.2  Battery Charging Profile
      3. 9.3.3  Control State Diagram for System Implementation
      4. 9.3.4  Device Power Up
      5. 9.3.5  Switched Cap Function
        1. 9.3.5.1 Theory of Operation
      6. 9.3.6  Charging Start-Up
      7. 9.3.7  Integrated 16-Bit ADC for Monitoring and Smart Adapter Feedback
      8. 9.3.8  Device Internal Thermal Shutdown, TSBUS, and TSBAT Temperature Monitoring
      9. 9.3.9  INT Pin, STAT, FLAG, and MASK Registers
      10. 9.3.10 CDRVH and CDRVL_ADDRMS Functions
      11. 9.3.11 Parallel Operation Using Master and Slave Modes
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device Modes and Protection Status
        1. 9.4.1.1 Input Overvoltage, Overcurrent, Undercurrent and Short-Circuit Protection
        2. 9.4.1.2 Battery Overvoltage and Overcurrent Protection
        3. 9.4.1.3 Cycle-by-Cycle Current Limit
    5. 9.5 Programming
      1. 9.5.1 F/S Mode Protocol
    6. 9.6 Register Maps
      1. 9.6.1 Customer Registers
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Standalone Application Information (for use with switching charger)
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Parallel BQ25968 for Higher Power Applications
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curve
  12. 11Power Supply Recommendations
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  14. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 第三方产品免责声明
      2. 13.1.2 Device Nomenclature
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 接收文档更新通知
    4. 13.4 支持资源
    5. 13.5 Trademarks
    6. 13.6 静电放电警告
    7. 13.7 术语表
  15. 14Mechanical, Packaging, and Orderable Information

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10.2.2.2 Detailed Design Procedure

If the total loss is greater than desired for a single BQ25968 at the fast charge current, two devices can be used in parallel to reduce losses. The same design procedure is applied for the master and slave devices, with a few additional steps for parallel operation.

The master device is used for BAT current sensing, so the slave device should short SRN and SRP to GND.

The master device supplies the SYNCOUT signal to the slave, so connect pin A5 of the master to pin A7 of the slave device.

The master device controls the OVP FET (if used), so the slave device should connect VAC to VBUS.