ZHCS015G october   2011  – august 2023 BQ25504

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 说明（续）
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Maximum Power Point Tracking
      2. 8.3.2 Battery Undervoltage Protection
      3. 8.3.3 Battery Overvoltage Protection
      4. 8.3.4 Battery Voltage in Operating Range (VBAT_OK Output)
      5. 8.3.5 Nano-Power Management and Efficiency
    4. 8.4 Device Functional Modes
      1. 8.4.1 Cold-Start Operation (VSTOR < VSTOR_CHGEN, VIN_DC > VIN(CS) and PIN > PIN(CS))
      2. 8.4.2 Main Boost Charger Enabled (VSTOR > VSTOR_CHGEN, VIN_DC > VIN(DC) and EN = LOW )
      3. 8.4.3 Thermal Shutdown
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Storage Element Selection
      2. 9.1.2 Inductor Selection
      3. 9.1.3 Capacitor Selection
        1. 9.1.3.1 VREF_SAMP Capacitance
        2. 9.1.3.2 VIN_DC Capacitance
        3. 9.1.3.3 VSTOR Capacitance
        4. 9.1.3.4 Additional Capacitance on VSTOR or VBAT
    2. 9.2 Typical Applications
      1. 9.2.1 Solar Application Circuit
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 TEG Application Circuit
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 MPPT Disabled, Low Impedance Source Application Circuit
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
      2. 12.1.2 Zip Files
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  14. 13Mechanical, Packaging, and Orderable Information

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7.5 Electrical Characteristics

Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for conditions of VIN_DC = 1.2V, VBAT = VSTOR = 3V. External components LBST = 22 µH, CHVR = 4.7 µF CSTOR= 4.7 µF.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
BOOST CONVERTER \ CHARGER STAGE
VIN(DC)DC input voltage into VIN_DCCold-start completed1303000mV
IIN(DC)Peak Current flowing from VIN into VIN_DC input0.5V < VIN < 3 V; VSTOR = 4.2 V200300mA
PINInput power range for normal chargingVBAT > VIN_DC; VIN_DC = 0.5 V0.01300mW
VIN(CS)Cold-start Voltage. Input voltage that will start charging of VSTORVBAT < VBAT_UV; VSTOR = 0 V;
0°C < TA < 85°C		600700mV
PIN(CS)Minimum cold-start input power to start normal chargingVBAT < VSTOR(CHGEN)
VIN_DC clamped to VIN_CS by cold start circuit
VBAT = 100 µF ceramic		15µW
VSTOR_CHGENVoltage on VSTOR when cold start operation ends and normal charger operation begins1.61.771.95V
RBAT(on)Resistance of switch between VBAT and VSTOR when turned on.VBAT = 4.2 V; VSTOR load = 50 mA2Ω
RDS(on)Charger Low Side switch ON resistanceVBAT = 2.1 V2Ω
VBAT = 4.2 V2
Charger rectifier High Side switch ON resistanceVBAT = 2.1 V5Ω
VBAT = 4.2 V5
fSW_BSTBoost converter mode switching frequency1MHz
BATTERY MANAGEMENT
IVBATLeakage on VBAT pinVBAT = 2.1 V; VBAT_UV = 2.3 V, TJ = 25°C VSTOR = 0 V15nA
VBAT = 2.1 V; VBAT_UV = 2.3 V,
–40°C < TJ < 65°C, VSTOR = 0 V		80nA
IVSTORVSTOR Quiescent current Charger Shutdown in UV ConditionVIN_DC = 0V;
VBAT < VBAT_UV = 2.4V;
VSTOR = 2.2V, No load on VBAT		330750nA
VSTOR Quiescent current Charger Shutdown in OV ConditionVIN_DC = 0V,
VBAT > VBAT_OV, VSTOR = 4.25,
No load on VBAT		5701400nA
VBAT_OVProgrammable voltage range for overvoltage threshold (Battery voltage is rising)VSTOR increasing2.55.25V
VBAT_OV_HYSTBattery voltage overvoltage hysteresis threshold (Battery voltage is falling), internal thresholdVSTOR decreasing183589mV
VBAT_UVProgrammable voltage range for under voltage threshold (Battery voltage is falling)VSTOR decreasing; VBAT_UV > VBias2.2VBAT_OVV
VBAT_UV_HYSTBattery under voltage threshold hysteresis, internal thersholdVSTOR increasing4080125mV
VBAT_OKProgrammable voltage range for threshold voltage for high to low transition of digital signal indicating battery is OK,VSTOR decreasingVBAT_UVVBAT_OVV
VBAT_OK_HYSTProgrammable voltage range for threshold voltage for low to high transition of digital signal indicating battery is OK,VSTOR increasing50VBAT_OV-VBAT_UVmV
VBAT_ACCURACYOverall Accuracy for threshold values, UV, OV, VBAT_OKSelected resistors are 0.1% tolerance–5%5%
VBAT_OKHVBAT OK (High) threshold voltageLoad = 10 µAVSTOR-200mVV
VBAT_OKLVBAT OK (Low) threshold voltageLoad = 10 µA100mV
TSD_PROTLThe temperature at which the boost converter is disabled and the switch between VBAT and VSTOR is disconnected to protect the batteryOT_Prog = LO65°C
TSD_PROTHOT_Prog = HI120
OT_ProgVoltage for OT_PROG High setting2V
Voltage for OT_PROG Low setting0.3V
BIAS and MPPT CONTROL STAGE
VOC_sampleSampling period of VIN_DC open circuit voltage16s
VOC_SettlingSampling period of VIN_DC open circuit voltage256ms
VIN_RegRegulation of VIN_DC during charging0.5 V <VIN < 3 V; IIN (DC) = 10 mA–10%10%
VIN_shutoffDC input voltage into VIN_DC when charger is turned off4080130mV
MPPT_DisableThreshold on VOC_SAMP to disable MPPT functionalityVSTOR-15 mVV
VBIASVoltage node which is used as reference for the programmable voltage thresholdsVIN_DC ≥ 0.5V; VSTOR ≥ 1.8 V1.211.251.27V