LMG5200
- Integrated 15-mΩ GaN FETs and Driver
- 80-V Continuous, 100-V Pulsed Voltage Rating
- Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
- Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
- Ideal for Isolated and Non-Isolated Applications
- Gate Driver Capable of Up to 10 MHz Switching
- Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
- Supply Rail Undervoltage Lockout Protection
- Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
- Low Power Consumption
The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.
GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).
技术文档
设计与开发
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LMG5200EVM-02 — LMG5200 GaN 功率级评估模块
LMG5200POLEVM-10 — LMG5200 GaN 48V 至 1V 负载点评估模块
LMG5200POLEVM-10 EVM 旨在评估 48V 至 1V 应用中的 LMG5200 GaN 功率级和 TPS53632G 半桥负载点控制器。该 EVM 将 48V-1V 转换器作为具有电流加倍器整流器的单级硬开关半桥加以实现。EVM 支持 36 至 75 伏的输入电压和高达 50A 的输出电流。该拓扑有效支持高降压比，同时提供高输出电流和可控性。
BOOSTXL-3PHGANINV — 具有基于分流器的直列式电机相位电流感应功能的 48V 三相逆变器评估模块
BOOSTXL-3PHGANINV 评估模块采用 48V/10A 三相 GaN 逆变器，具有基于分流器的精度直列式相位电流感应功能，可对精度驱动器（例如，伺服驱动器）进行精准控制。
MathWorks MATLAB 和 Simulink 示例模型包括以下内容：
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
PMP22089 — 配备 GaN 技术的半桥点负载转换器参考设计
PMP4486 — 具有 3 路输出的 48V 输入电压数字 POL 参考设计
PMP4497 — LMG5200 48V 至 1V/40A 单级转换器参考设计
TIDA-00909 — 适用于高速驱动应用的 48V/10A 高频 PWM 三相 GaN 逆变器参考设计
TIDA-00913 — 具有基于分流电阻的直列电机相电流检测功能的 48V 三相逆变器参考设计
TIDM-02006 — 优于快速串行接口 (FSI) 参考设计的分布式多轴伺服驱动器
TIDM-02007 — 在单个 MCU 上使用快速电流环路 (FCL) 和 SFRA 的双轴电机驱动器的参考设计
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| QFM (MOF) | 9 | Ultra Librarian |
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