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TMCS1126

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80ARMS 500kHz Hall-effect current sensor with AFR, reference and ALERT

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数据表

TMCS1126

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产品详情

Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 500000 Sensitivity error (%) 0.75 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 500000 Sensitivity error (%) 0.75 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² 10.3 x 10.3
  • High continuous current capability: 82 ARMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5000 VRMS
    • Reinforced working voltage: 1100 VDC
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity drift: ±20 ppm/°C
    • Offset error: ±0.2 mV
    • Offset drift: ±2 µV/°C
    • Non-linearity: ±0.1%
  • Low lifetime drift: ±0.5% (maximum)
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Signal bandwidth: 500 kHz
  • Low propagation delay: 95 ns
  • Fast overcurrent detection response: 100 ns
  • Operating supply range: 3 V to 5.5 V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • TMCS1126x6x: 15 mV/A
    • TMCS1126x1x: 25 mV/A
    • TMCS1126x7x: 30 mV/A
    • TMCS1126x9x: 33 mV/A
    • TMCS1126x8x: 40 mV/A
    • TMCS1126x2x: 50 mV/A
    • TMCS1126x3x: 75 mV/A
    • TMCS1126x4x: 100 mV/A
    • TMCS1126x5x: 150 mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • High continuous current capability: 82 ARMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5000 VRMS
    • Reinforced working voltage: 1100 VDC
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity drift: ±20 ppm/°C
    • Offset error: ±0.2 mV
    • Offset drift: ±2 µV/°C
    • Non-linearity: ±0.1%
  • Low lifetime drift: ±0.5% (maximum)
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Signal bandwidth: 500 kHz
  • Low propagation delay: 95 ns
  • Fast overcurrent detection response: 100 ns
  • Operating supply range: 3 V to 5.5 V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • TMCS1126x6x: 15 mV/A
    • TMCS1126x1x: 25 mV/A
    • TMCS1126x7x: 30 mV/A
    • TMCS1126x9x: 33 mV/A
    • TMCS1126x8x: 40 mV/A
    • TMCS1126x2x: 50 mV/A
    • TMCS1126x3x: 75 mV/A
    • TMCS1126x4x: 100 mV/A
    • TMCS1126x5x: 150 mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1126 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.45% maximum total error over temperature and lifetime with no system level calibration, or less than 1% maximum total error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±103A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5000VRMS, coupled with minimum 8.1 mm creepage and clearance provide up to 1100VDC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection. TI provides the TMCS1126xxB as a lower-cost option.

The TMCS1126 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.45% maximum total error over temperature and lifetime with no system level calibration, or less than 1% maximum total error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±103A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5000VRMS, coupled with minimum 8.1 mm creepage and clearance provide up to 1100VDC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection. TI provides the TMCS1126xxB as a lower-cost option.
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类型 标题 下载最新的英语版本 日期
* 数据表 TMCS1126 Precision 500kHz Hall-Effect Current Sensor With ±1100V Reinforced Isolation Working Voltage , Overcurrent Detection and Ambient Field Rejection 数据表 PDF | HTML 2023年 11月 29日
技术文章 为更安全的太阳能系统和电动汽车充电器提供精确的电流检测 PDF | HTML 英语版 PDF | HTML 2024年 4月 17日
技术文章 為更安全的太陽能系統和 EV 充電器提供準確的電流感測 PDF | HTML 2024年 4月 17日
技术文章 더 안전한 태양광 에너지 시스템 및 EV 충전기를 위한 정확한 전류 감 지 제공 PDF | HTML 2024年 4月 15日
EVM 用户指南 TMCS1126x 评估模块 PDF | HTML 英语版 PDF | HTML 2024年 1月 8日
证书 TMCS1126AEVM EU Declaration of Conformity (DoC) 2023年 8月 21日
证书 TMCS1126BEVM EU Declaration of Conformity (DoC) 2023年 8月 21日
证书 TMCS1126CEVM EU Declaration of Conformity (DoC) 2023年 8月 18日
应用简报 低漂移、高精度、直插式隔离磁性电机电流测量 (Rev. A) PDF | HTML 英语版 (Rev.A) 2023年 7月 31日

设计和开发

如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。

评估板

TMCS-A-ADAPTER-EVM — 适用于 DVG、DVF 或 DZP 封装的 TMM 隔离式霍尔效应电流传感器适配器卡（不包括霍尔效应电流传感器）

TMCS-A-ADAPTER-EVM 评估模块 (EVM) 旨在促进快速、方便地使用具有 DVG、DVF 或 DZP 封装的 TMCS 隔离式霍尔效应精密电流检测监控器。此 EVM 支持用户通过霍尔输入侧推送高达 90A 的电流，同时通过隔离栅测量隔离式输出。TMCS-A-ADAPTER-EVM 只有一个未组装的 PCB，预留了用于组装测试点的位置和用于器件评估的分线接头引脚。PCB 焊盘采用重叠结构，因此任何 DVG、DVF 或 DZP TMCS 器件都能与 TMCS-A-ADAPTER-EVM 配合使用。

用户指南: PDF | HTML
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评估板

TMCS1126EVM — TMCS1126 隔离式霍尔效应电流检测监视器评估模块

TMCS1126EVM 工具可帮助您快速、便捷地使用 TMCS1126，后者是一种采用内部基准的隔离式霍尔效应精密电流检测监测器。此评估模块支持用户在霍尔输入侧实施最大工作电流，同时通过增强型隔离栅测量隔离式输出。此电路板布局并非是目标电路的模型，也并非专门用于电磁 (EMI) 测试。TMCS1126EVM 由单个印刷电路板构成，可拆分为五个单独部分，支持用户测试单个静态点的所有灵敏度变化（A = 0.5Vs、B = 0.33Vs 或 C = 0.1Vs）。
用户指南: PDF | HTML
英语版: PDF | HTML
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参考设计

TIDA-010937 — 具有数字接口的隔离式低延迟高 PWM 抑制霍尔电流检测参考设计

此参考设计展示了一种精确的低延迟增强型隔离式双向电流检测系统，它使用 TMCS1123 精密霍尔效应电流传感器，通过高达 ±62A 的三相逆变器实现可靠的相电流和直流链路电流检测，过流检测时间小于 100ns。过流阈值可配置为满量程输入电流范围的 2.5 倍。具有高速 SPI 的小型 12 位模数转换器或具有高达 21MHz 时钟的 Δ-Σ 调制器可提供高抗噪性 3.3V I/O 数字接口。该接口连接到 C2000 或 Sitara MCU 等主机处理器，方便使用不同的模数转换技术对封装内霍尔传感器进行性能评估。
设计指南: PDF
封装 引脚 下载
SOIC (DVG) 10 查看选项
应遵守 TI 评估类商品的标准条款与条件。

订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

支持和培训

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