SLVK327 July 2026 TPS7H1301-SP
- 1
- 2
- Trademarks
- 1 Introduction
- 2 Single-Event Effects (SEE)
- 3 Device and Test Board Information
- 4 Irradiation Facility and Setup
- 5 LETEFF and Range Calculation
- 6 Test Setup and Procedures
- 7 Destructive Single-Event Effects (DSEE)
- 8 Single-Event Transients (SET)
- 9 Event Rate Calculations
- 10Summary
- A References
7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-Off mode the device was disabled using the EN-pin by forcing 0V (using Ch #1 of a Keysight E36311A). During the SEB/SEGR testing with the device enabled/disabled, not a single input current event was observed.
The species used for the SEB testing was 169Tm at 19.5 MeV/nucleon (KSEE) and 165Ho at 15MeV/nucleon (TAMU). For both ions an angle of 0° was used to achieve a LETEFF of ≈75MeV·cm2/mg (for more details refer to Table 5-1). Flux of ≈105 ions/cm2/s and a fluence of ≈107 ions/cm2 per run was used. Run duration to achieve this fluence was ≈2 minutes. The 4 production devices (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended input voltage of 6.3V and both min and max VOUT values of -0.6V and -6V, respectively. No SEB/SEGR current events were observed during the 8 runs, indicating that the TPS7H1301-SP is SEB/SEGR-free up to LETEFF = 75MeV·cm2/mg. Table 8-4 shows the SEB/SEGR test conditions and results.
| Run # | Unit # |
Facility |
Production Type |
Ion | LETEFF (MeV·cm2/mg) | Flux (ions/cm2/s) | Fluence (ions/cm2) | Enabled Status |
VIN (V) |
VOUT (V) |
IOUT (mA) |
SEB (# Events) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
5 |
1 |
KSEE |
Final |
169Tm |
75 |
1.35 x 105 |
9.99 x 106 |
EN |
6.3 |
-6 |
75 |
0 |
|
6 |
1 |
KSEE | Final | 169Tm |
75 |
1.07 x 105 |
9.99 x 106 | DIS |
6.3 |
- |
- |
0 |
|
7 |
2 |
KSEE | Final | 169Tm |
75 |
1.05 x 105 |
1.00 x 107 |
EN |
6.3 |
-0.6 |
400 |
0 |
|
8 |
2 |
KSEE | Final | 169Tm |
75 |
1.16 x 105 |
1.00 x 107 |
DIS |
6.3 |
- |
- |
0 |
|
9 |
3 |
KSEE | Final | 169Tm |
75 |
1.14 x 105 |
1.00 x 107 |
EN |
6.3 |
-0.6 |
400 |
0 |
|
10 |
3 |
KSEE | Final | 169Tm |
75 |
1.16 x 105 |
1.00 x 107 |
DIS |
6.3 |
- |
- |
0 |
|
11 |
4 |
KSEE | Final | 169Tm |
75 |
1.16 x 105 |
1.00 x 107 |
EN |
6.3 |
-6 |
75 |
0 |
|
12 |
4 |
KSEE | Final | 169Tm |
75 |
1.15 x 105 |
1.00 x 107 |
DIS |
6.3 |
- |
- |
0 |
Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:
σSEB ≤ 4.61 x 10-8 cm2/device for LETEFF = 75MeV·cm2/mg and T = 25°C.
Figure 7-3 SEB On Current v. Time for Run #5 at T = 25°C, VOUT=-6V, and IOUT=75mA
Figure 7-4 SEB On Current v. Time for Run #7 at T = 25°C, VOUT=-0.6V, and IOUT=400mA
Figure 7-5 SEB Off Current v. Time for Run #6 at T = 25°C and VIN=6.3V