SLVK327 July   2026 TPS7H1301-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

3 Device and Test Board Information

The TPS7H1301-SP is packaged in a 14-pin CFP ceramic package as shown in Figure 3-1. The TPS7H1301EVM-CVAL was used to evaluate the performance and characteristics of the TPS7H1301-SP under heavy ion radiation. The evaluation module is shown in Figure 3-2. The schematics are shown in Figure 3-3. Table 3-1 shows the components updated on the TPS7H1301EVM-CVAL for this SEE test campaign.

Photograph of Delidded TPS7H1301-SP [Left] and Pinout Diagram [Right]Figure 3-1 Photograph of Delidded TPS7H1301-SP [Left] and Pinout Diagram [Right]
Note: The package was delidded/decapped to reveal the die face for all heavy-ion testing.
TPS7H1301-SP EVM Top ViewFigure 3-2 TPS7H1301-SP EVM Top View
TPS7H1301-SP EVM SchematicFigure 3-3 TPS7H1301-SP EVM Schematic
Table 3-1 TPS7H1301-SP Component Changes for SEE Testing
VOUT (V)R6 (FB-Top)R7 (FB-Bot)
-62kΩ222Ω
-52kΩ272Ω
-1.82kΩ1kΩ
-0.62kΩOpen