SLVK230 November   2025 TPS7H4102-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Safe Operating Area (SOA) Results
    2. 7.2 Single-Event Latch-up (SEL) Results
    3. 7.3 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

7.3 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results

During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-OFF mode the device was disabled using each channel's EN-pin by forcing 0V (using CH # 1/3 of a E36311A Keysight PS).

The species used for the SEB testing was 109Ag (TAMU) at 15 MeV/nucleon and 109Ag (KSEE) at 19.5 MeV/nucleon. For both ions an angle of incidence of 0° was used to achieve a LETEFF of ≈ 48MeV·cm2/mg (for more details refer to Table 5-1). The kinetic energy in the vacuum for 109Ag (TAMU) is 1.635 GeV and 109Ag (KSEE) is 2.125GeV. Flux of ≈105 ions/cm2/s and a fluence of ≈107 ions/cm2 per run was used. Run duration to achieve this fluence was ≈2 minutes. The 4 devices were powered up for SEL at the maximum recommended operating conditions based on the SOA, which are a VIN of 6.5V and 3A/channel in the "high current case" and a VIN of 7V and 1.5A/channel in the "high voltage case". Output conditions were tested in two different configurations, either with each channel configured to output 1.2V or each channel configured to output 1.8V. During testing of the 4 devices, the TPS7H4102-SEP did not exhibit any SEB with heavy-ions with LETEFF = 48 MeV·cm2/mg at flux ≈105 ions/cm2/s , fluence of ≈107 ions/cm2, and a die temperature of 25°C while maintaining operating conditions within the SOA. Table 8-9shows the SEB/SEGR test conditions and results.

Table 7-7 Summary of TPS7H4102-SEP SEB/SEGR Test Condition and Results
RUN #UNIT #

Facility

IONLETEFF (MeV·cm2/mg)FLUX (ions/cm2/s)FLUENCE (ions/cm2)ENABLED STATUS

VIN (V)

VOUT (V)

IOUT/Channel (A)

SEB EVENT?

5

1

TAMU

109Ag

48

1.15 × 105

1.00 × 107

EN

6.5

1.8

3

No

6

1

TAMU109Ag

48

1.17 × 105

1.00 × 107DIS

7

0

0

No

7

2

TAMU109Ag

48

1.17 × 105

1.00 × 107

EN

6.5

1.2

3

No

8

2

TAMU109Ag

48

1.13 × 105

1.00 × 107

DIS

7

0

0

No

9

3

TAMU109Ag

48

1.19 × 105

1.00 × 107

EN

7

1.8

1.5

No

10

3

TAMU109Ag

48

1.18 × 105

1.00 × 107

DIS

7

0

0

No

11

4

TAMU109Ag

48

1.22 × 105

1.00 × 107

EN

7

1.2

1.5

No

12

4

TAMU109Ag

48

1.16 × 1051.00 × 107

DIS

7

0

0

No

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:

σSEB ≤ 4.61 x 10-8 cm2/device for LETEFF = 48 MeV·cm2/mg and T = 25°C.

SEB On Run #7 (VIN = 6.5V, VOUT = 1.2V, IOUT = 3A/ch) Figure 7-5 SEB On Run #7 (VIN = 6.5V, VOUT = 1.2V, IOUT = 3A/ch)
SEB Off Run #8 (VIN = 7V)Figure 7-6 SEB Off Run #8 (VIN = 7V)
SEB On Run #11 (VIN = 7V, VOUT = 1.2V, IOUT = 1.5A/ch) Figure 7-7 SEB On Run #11 (VIN = 7V, VOUT = 1.2V, IOUT = 1.5A/ch)