SLVK230 November   2025 TPS7H4102-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. LETEFF and Range Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Safe Operating Area (SOA) Results
    2. 7.2 Single-Event Latch-up (SEL) Results
    3. 7.3 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14.   A References

Test Setup and Procedures

There were three input supplies used to power the TPS7H4102-SEP which provided VIN and EN for each channel. The VIN for the device was provided via Ch. 3 of an N6705C power module and ranged from 3.3 to 5V for SET and 6.5 to 7V for SEL and SEB/SEGR. Each channel's EN was provided from channels 1 and 2 of an E36311A power supply and were forced to either 0V for SEB Off or 5V for SET and other DSEE testing.

The primary signal monitored on the EVM was the VOUT of each channel and this was done using two distinct NI PXIe-5172 scope cards which were set to trigger on a 3% window based on the nominal value of the channel's VOUT. All SEB On, SEL, and SET testing used these conditions with only the SEB Off testing having different conditions. The conditions for SEB Off were a positive edge trigger at 0.5V which would check to see if the device ever incorrectly turned on while it was disabled.

To load each channel of the device either a Chroma 63600 E-load was attached to a channel in Constant Resistance (CR) mode in order to achieve either a 1.5A or 3A load.

All equipment was controlled and monitored using a custom-developed LabVIEW™ program (PXI-RadTest) running on a HP-Z4 desktop computer. The computer communicates with the PXI chassis via an MXI controller and NI PXIe-8381 remote control module.

Table 6-1 shows the connections, limits, and compliance values used during the testing. Figure 6-1 shows a block diagram of the setup used for SEE testing of the TPS7H4102-SEP.

Table 6-1 Equipment Settings and Parameters Used During the SEE Testing of the TPS7H4102-SEP
PIN NAMEEQUIPMENT USEDCAPABILITYCOMPLIANCERANGE OF VALUES USED
VINN6705C(CH # 3)60V, 17A5A3.3 to 7V
ENXE36311A (CH # 1/2)5V,5A0.1A0V, 5V
VOUTXPXIe-5172

(1-2)

100 MS/s100 MS/s
VOUTXChroma 63600 E-load80AMedium0.4Ω to 1.2Ω

All boards used for SEE testing were fully checked for functionality. Dry runs were also performed to maintain that the test system was stable under all bias and load conditions prior to being taken to the radiation test facilities. During the heavy-ion testing, the LabVIEW control program powered up the TPS7H4102-SEP device and set the sourcing and monitoring functions of the external equipment. After functionality and stability was confirmed, the beam shutter was opened to expose the device to the heavy-ion beam. The shutter remained open until the target fluence was achieved (determined by external detectors and counters). During irradiation, the NI scope cards continuously monitored the signals. When the output exceeded the pre-defined 3% window trigger, a data capture was initiated. No sudden increases in current were observed (outside of normal fluctuations) on any of the test runs and indicated that no SEL or SEB/SEGR events occurred during any of the tests when operating within the SOA.

 Block Diagram of the SEE Test Setup for the TPS7H4102-SEPFigure 6-1 Block Diagram of the SEE Test Setup for the TPS7H4102-SEP
Table 6-2 Comp Network and Output Component Values
VOUT (V)LX (H)RF_TOPX (Ω)RF_BOTX (Ω)CPX (F)RSX (Ω)CSX (F)CSS_TRX (F)
1.21.8µ10k9.88k330p10.5k18n1.8n
1.82.2µ10k4.93k220p16.2k18n2.7n