SLVK230 November   2025 TPS7H4102-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Safe Operating Area (SOA) Results
    2. 7.2 Single-Event Latch-up (SEL) Results
    3. 7.3 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

Abstract

The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the TPS7H4102-SEP including a Safe-Operating-Area (SOA) design of experiments (DOE) for both the TPS7H4104-SP/SEP and TPS7H4102-SP/SEP. Heavy-ions with LETEFF of 48 MeV·cm2/mg were used to irradiate 4 devices. Flux of ≈105 ions/cm2/s and fluence of ≈107 ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H4102-SEP is SEL-free up to 48 MeV·cm2/mg at T = 125°C and SEB/SEGR free up to 48 MeV·cm2/mg at T = 25°C while operating within the SOA bias conditions. SET transients performance for output voltage excursions ≥ |3%| from the nominal voltage was monitored on all four outputs. Throughout all test runs, no transients were recorded on any of the device outputs, indicating the TPS7H4102-SEP is SET and SEFI free at 48 MeV·cm2/mg.