SBOK044B December   2020  – December 2024 TPS7H4010-SEP

 

  1.   1
  2. 1 Abstract
  3.   Trademarks
  4. 2 Introduction
  5. 3 Single-Event Effects (SEE)
  6. 4 Device and Test Board Information
  7. 5 Irradiation Facility and Setup
  8. 6 Depth, Range, and LETEFF Calculation
  9. 7 Test Setup and Procedures
  10. 8 Destructive Single-Event Effects (DSEE)
    1. 8.1 Single-Event Latch-up (SEL) Results
    2. 8.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 9 Single-Event Transients (SET)
  12. 10Event Rate Calculations
  13. 11Summary
  14. 12Revision History
  15.   A Total Ionizing Dose from SEE Experiments
  16.   B References

12 Revision History

Changes from Revision * (December 2020) to Revision A (April 2023)

  • Changes made throughout explaining the ions used while testing.Go

Changes from Revision A (April 2023) to Revision B (November 2024)

  • Changes SSET to SSEFI throughout the documentGo
  • Updated to show all ions used during testingGo
  • Updated Summary of TPS7H4010-SEP SEB Test Condition and Results table Go
  • Added Weibull Parameters for VOUT = 1.8V and 3.3V Cases tableGo
  • Added Weibull FITs for each VOUT case figureGo
  • Updated Event Rate Calculations table data (added tables 11-3 through 11-8)Go