SBOK044B December   2020  – December 2024 TPS7H4010-SEP

 

  1.   1
  2. 1 Abstract
  3.   Trademarks
  4. 2 Introduction
  5. 3 Single-Event Effects (SEE)
  6. 4 Device and Test Board Information
  7. 5 Irradiation Facility and Setup
  8. 6 Depth, Range, and LETEFF Calculation
  9. 7 Test Setup and Procedures
  10. 8 Destructive Single-Event Effects (DSEE)
    1. 8.1 Single-Event Latch-up (SEL) Results
    2. 8.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 9 Single-Event Transients (SET)
  12. 10Event Rate Calculations
  13. 11Summary
  14. 12Revision History
  15.   A Total Ionizing Dose from SEE Experiments
  16.   B References

2 Introduction

The TPS7H4010-SEP is a space-enhanced-plastic, 3.5V to 32V input, 6A, synchronous step-down voltage converter. The device provides exceptional efficiency and output accuracy in a very small solution size. Peak current-mode control is employed. Additional features such as adjustable switching frequency, synchronization to an external clock, FPWM option, power-good flag, precision enable, adjustable soft start, and tracking provide both flexible and easy-to-use solutions for a wide range of applications.

The TPS7H4010-SEP requires few external components and has a pinout designed for simple PCB layout with optimal EMI and thermal performance. Protection features include thermal shutdown, input undervoltage lockout, cycle-by-cycle current limiting, and hiccup short-circuit protection. The device is offered in a 30-pin WQFN plastic package. General device information and test conditions are listed in Table 2-1. For more detailed technical specifications, user-guides, and application notes please go to TPS7H4010-SEP product page.

Table 2-1 Overview Information
DESCRIPTION(1)DEVICE INFORMATION
TI Part NumberTPS7H4010-SEP
Orderable NumberTPS7H4010MRNPTSEP
Device FunctionPoint-of-load (POL) Switching Regulator
TechnologyLinear BiCMOS 8 (LBC8

)

Exposure FacilityRadiation Effects Facility, Cyclotron Institute, Texas A&M University (25 MeV/nucleon)
Heavy Ion Fluence per Run5.65 × 105 – 1 × 107 ions/cm2
Irradiation Temperature10°C (for SEB/SEGR testing), 25°C (for SET testing),
and 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.