ZHCSLS3B January   2022  – September 2023 TPS62843

PRODMIX  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Smart Enable and Shutdown (EN)
      2. 8.3.2 Soft Start
      3. 8.3.3 VSET Pin: Output Voltage Selection
      4. 8.3.4 Undervoltage Lockout (UVLO)
      5. 8.3.5 Switch Current Limit, Short-Circuit Protection
      6. 8.3.6 Thermal Shutdown
      7. 8.3.7 Output Voltage Discharge
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Save Mode Operation
      2. 8.4.2 100% Mode Operation
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 第三方产品免责声明
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Electrical Characteristics

TJ = –40°C to +125°C, VIN = 1.8 V to 5.5 V. Typical values are at TJ = 25°C, VIN = 3.6 V and VOUT = 0.7 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IQ Operating Quiescent Current (Power Save Mode) Non-switching, VEN = VIN, IOUT = 0 µA, TJ = -40°C to 85°C 275 1500 nA
Switching, VEN = VIN, IOUT = 0 µA, VOUT = 0.7 V 350 nA
ISD Shutdown Current VEN = 0 V, VSET = GND, TJ = -40°C to 85°C 4 850 nA
UVLO
VUVLO(R) Undervoltage Lockout Rising Threshold VIN rising, IOUT = 0 µA 1.75 1.8 V
VUVLO(F) Undervoltage Lockout Falling Threshold VIN falling, IOUT = 0 µA 1.65 1.7 V
VUVLO(H) Undervoltage Lockout Hysteresis 100 mV
VSET PIN
VSET(LKG) VSET Input leakage current TJ = -40°C to 85°C 10 800 nA
VSET(H) VSET High-level detection Voltage at VSET during startup 1.0 V
RSET RSET accuracy TJ = -20°C to 125°C –4 4 %
RSET RSET accuracy TJ = -40°C to 125°C –3.5 3.5 %
ENABLE
VEN(R) EN voltage rising threshold EN rising, enable switching 0.8 V
VEN(F) EN voltage falling threshold EN falling, disable switching 0.4 V
VEN(LKG) EN Input leakage current VEN > 0.8 V,  TJ = -40°C to 85°C 1 25 nA
REN;PD EN internal pull-down resistance EN pin to GND 425 500 kΩ
VOUT VOLTAGE
VOUT DC Output voltage accuracy PWM operation, TJ = -20°C to 125°C –1 +1 %
VOUT DC Output voltage accuracy PWM operation, TJ = -40°C to 125°C –1.5 +1.5 %
VOUT TPS628436 0.4 0.8 V
TPS628437 0.8 1.8 V
TPS628438 1.8 3.6 V
IVOS(LKG) VOS input leakage current TPS628436, VEN = VIN, VVOS = 0.7 V,  TJ = -40°C to 85°C 100 nA
TPS628437, VEN = VIN, VVOS = 1.2 V,  TJ = -40°C to 85°C 100 250 nA
TPS628438, VEN = VIN, VVOS = 3.3 V,  TJ = -40°C to 85°C 275 450 nA
fSW IOUT = 400mA 1.5 MHz
STARTUP
tSS TPS628436 soft-start time From VOUT= 0% to VOUT= 95% of VOUT nominal 0.45 0.6 ms
TPS628438 soft-start time 1.0 1.4
TPS628437 soft-start time 0.7 1.0
tStartup_delay EN HIGH to start of switching delay R2D = GND 330 560 µs
POWER STAGE
RDSON(HS) High-side MOSFET on-resistance VIN = 3.6V, IOUT = 300 mA 170 260 mΩ
RDSON(LS) Low-side MOSFET on-resistance VIN = 3.6V, IOUT = 300 mA 70 115 mΩ
ILKG_SW Leakage Current into SW-Pin VSW = 0.7V, TJ = -40°C to 85°C 0 35 nA
ILKG_SW Leakage Current into SW-Pin VSW = 1.2V, TJ = -40°C to 85°C 0 45 nA
ILKG_SW Leakage Current into SW-Pin VVIN > VSW, VSW = 3.3V, TJ = -40°C to 85°C 0 45 nA
OVERCURRENT PROTECTION 
IHS(OC) High-side peak current limit VIN ≧ 2.2V 0.9 1.1 1.3 A
ILS(OC) Low-side valley current limit VIN ≧ 2.2V 0.79 1.0 1.11 A
OUTPUT DISCHARGE
RDSCH_VOS Output discharge resistor on VOS pin VEN = GND, I(VOS) = -10mA 7 22 Ω
THERMAL SHUTDOWN
TJ(SD) Thermal shutdown threshold Temperature rising 160 °C
TJ(HYS) Thermal shutdown hysteresis 20 °C