ZHCSA32C JULY   2012  – April 2019 TPS53015

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化应用
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Drivers
      2. 7.3.2 5-Volt Regulator
      3. 7.3.3 Soft-Start and Pre-biased Soft-Start Time
      4. 7.3.4 Overcurrent Protection
      5. 7.3.5 Overvoltage and Undervoltage Protection
      6. 7.3.6 UVLO Protection
      7. 7.3.7 Thermal Shutdown
      8. 7.3.8 Power Good
    4. 7.4 Device Functional Modes
      1. 7.4.1 PWM Operation
      2. 7.4.2 Auto-skip Eco-Mode Control
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Determine the Inductance Value
        2. 8.2.2.2 Output Capacitor
        3. 8.2.2.3 Input Capacitor
        4. 8.2.2.4 Bootstrap Capacitor
        5. 8.2.2.5 VREG5 Capacitor
        6. 8.2.2.6 Choose Output Voltage Resistors
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 商标
    2. 11.2 静电放电警告
    3. 11.3 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.1 Drivers

The TPS53015 device contains two high-current resistive MOSFET gate drivers. The low-side driver is a PGND referenced, VREG5 powered driver designed to drive the gate of a high-current, low RDS(on) N-channel MOSFET whose source is connected to PGND. The high-side driver is a floating SW referenced, VBST powered driver designed to drive the gate of a high-current, low RDS(on) N-channel MOSFET. To maintain the VBST voltage during the high-side driver ON-time, a capacitor is placed from SW to VBST. Each driver draws average current equal to gate charge (Qg and Vgs = 5 V) times switching frequency (fSW). To prevent cross-conduction, there is a narrow dead-time when both high-side and low-side drivers are OFF between each driver transition. During this time the inductor current is carried by one of the MOSFETs body diodes.