ZHCSJT6B may   2019  – february 2023 TPS1HB16-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SNS Timing Characteristics
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Programmable Current Limit
          3. 9.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 9.3.1.2.4 VBB During Short-to-Ground
        3. 9.3.1.3 Voltage Transients
          1. 9.3.1.3.1 Load Dump
          2. 9.3.1.3.2 Driving Inductive Loads
        4. 9.3.1.4 Reverse Battery
        5. 9.3.1.5 Fault Event – Timing Diagrams
      2. 9.3.2 Diagnostic Mechanisms
        1. 9.3.2.1 VOUT Short-to-Battery and Open-Load
          1. 9.3.2.1.1 Detection With Switch Enabled
          2. 9.3.2.1.2 Detection With Switch Disabled
        2. 9.3.2.2 SNS Output
          1. 9.3.2.2.1 RSNS Value
            1. 9.3.2.2.1.1 High Accuracy Load Current Sense
            2. 9.3.2.2.1.2 SNS Output Filter
        3. 9.3.2.3 Fault Indication and SNS Mux
        4. 9.3.2.4 Resistor Sharing
        5. 9.3.2.5 High-Frequency, Low Duty-Cycle Current Sensing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Automotive Standards
        1. 10.1.6.1 ISO7637-2
        2. 10.1.6.2 AEC-Q100-012 Short Circuit Reliability
      7. 10.1.7 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Thermal Considerations
        2. 10.2.2.2 RILIM Calculation
        3. 10.2.2.3 Diagnostics
          1. 10.2.2.3.1 Selecting the RISNS Value
      3. 10.2.3 Application Curves
    3. 10.3 Typical Application
      1. 10.3.1 Design Requirements
      2. 10.3.2 Detailed Design Procedure
      3. 10.3.3 Application Curves
      4. 10.3.4 Detailed Design Procedure
      5. 10.3.5 Application Curves
    4. 10.4 Power Supply Recommendations
    5. 10.5 Layout
      1. 10.5.1 Layout Guidelines
      2. 10.5.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.3.1.3 Voltage Transients

The TPS1HB16-Q1 device contains two types of voltage clamps which protect the FET against system-level voltage transients. The two different clamps are shown in Figure 9-2.

The clamp from VBB to GND is primarily used to protect the controller from positive transients on the supply line (for example, ISO7637-2). The clamp from VBB to VOUT is primarily used to limit the voltage across the FET when switching off an inductive load. If the voltage potential from VBB to GND exceeds the VBB clamp level, the clamp will allow current to flow through the device from VBB to GND (path 2). If the voltage potential from VBB to VOUT exceeds the clamping voltage, the power FET will allow current to flow from VBB to VOUT (path 3). Additional capacitance from VBB to GND can increase the reliability of the system during ISO 7637 pulse 2-A testing.

GUID-EAA00793-C87C-4DAD-9ACD-BDA1450857EC-low.gifFigure 9-2 Current Path During Supply Voltage Transient